T2G6001528-SG

TriQuint Semiconductor

15W, 28V, DC ??6 GHz, GaN RF Power Transistor

Manufacturer: TriQuint Semiconductor

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PDF pages: 18

Technical content

Applications

Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers

Ordering Information

T2G6001528-SG EAR99 Packaged part Flangeless T2G6001528-SG- EVB1 EAR99 3.1 – 3.5 GHz Evaluation Board Product Features

Frequency: DC to 6 GHz
Output Power (P 3dB ): 17 W at 3.3 GHz
Linear Gain: >15 dB at 3.3 GHz
Operating Voltage: 28 V
Low thermal resistance package Functional Block Diagram Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

The TriQuint T2G6001528-SG is a 15W (P 3dB ) discrete GaN on SiC HEMT which operates from DC to 6.0 GHz. The device is constructed with TriQuint’s proven TQGaN25 process , which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer am plifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request.

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 2 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Breakdown Voltage (BV DG ) 100 V Gate Voltage Range (V G) -7 to 0 V Drain Current (I D) 5 A Gate Current (I G) -5 to 14 mA Power Dissipation (P D) 28 W RF Input Power, CW, T = 25° C (P IN ) 36 dBm Channel Temperature (T CH ) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (V D) 28 V (Typ.) Drain Quiescent Current (I DQ ) 100 mA (Typ.) Peak Drain Current ( I D) 1400 mA (Typ.) Gate Voltage (V G) -3.2 V (Typ.) Channel Temperature (T CH ) 225 ° C (Max) Power Dissipation, CW (P D) 20.9 W (Max) Power Dissipation, Pulse (P D) 22.5 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. RF Characterization – Load Pull Performance at 2.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 18.5 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 18.6 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 61.5 % G3dB Gain at 3 dB Compression, Power Tuned 15.5 dB RF Characterization – Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 24 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 18 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 76.9 % G3dB Gain at 3 dB Compression, Power Tuned 21 dB

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 3 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com RF Characterization – Load Pull Performance at 3.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 15.1 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 19.5 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 64.1 % G3dB Gain at 3 dB Compression, Power Tuned 12.1 dB RF Characterization – Load Pull Performance at 4.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 12.6 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 19.6 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 63.8 % G3dB Gain at 3 dB Compression, Power Tuned 9.6 dB RF Characterization – Load Pull Performance at 5.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 13.3 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 20 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 60.8 % G3dB Gain at 3 dB Compression, Power Tuned 10.3 dB RF Characterization – Load Pull Performance at 6.0 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 11.6 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 20 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 60.7 % G3dB Gain at 3 dB Compression, Power Tuned 8.6 dB

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 4 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com RF Characterization – EVB Performance at 3.3 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain 14.5 15.5 dB P3dB Output Power at 3 dB Gain Compression 15.5 17 W DE 3dB Drain Efficiency at 3 dB Gain Compression 68 72 % G3dB Gain at 3 dB Compression 11.5 12.5 dB RF Characterization – Narrow Band Performance at 3. 30 GHz Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 100 mA Driving input power is determined at 1dB compression at EVB output connector. Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 5 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC ) DC at 85 ° C Case 6.7 ºC/W Channel Temperature (TCH ) 225 ° C Notes: Thermal resistance measured to bottom of package, CW. Median Lifetime Maximum Channel Temperature TBASE = 85° C, Pdiss = 22.5W 100.0 120.0 140.0 160.0 180.0 200.0 220.0 240.0 Maximum Channel Temperature ( oC) Pulse Width (sec) Maximum Channel Temperature Tbase = 85 oC, Pdiss = 22.5 W 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 6 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. 28V, 100mA, Pulsed signal with 100uS pulse width and 20% duty cycle 2. See page 15 for load pull and source pull reference planes. 0.1 0.2 0.3 0.4 0.5 0.1 0.2 0.3 Load Pull 1GHz, 28V, 100mA, 25 °C 42.6 40.9 39.4 38 76.9 70.16 64.02 58.44 53.35 48.72 44.51 23.67 21.98 20.45 20.45 Max P3dB is 42.6dBm at Zl = 13.83+5.57i ΩΩ ΩΩ Max PAE is 76.9% at Zl = 17.31+11.89i ΩΩ ΩΩ Max G3dB is 23.7dB at Zl = 12.11+8.9i ΩΩ ΩΩ Zs = 8.3+13.84i ΩΩ ΩΩ Smith-Chart Zo = 50 ΩΩ ΩΩ P3dB PAE3dB G3dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -0.1 0.1 0.2 0.3 0.4 Load Pull 2GHz, 28V, 100mA, 25 °C 42.67 42.28 41.92 41.6 41.31 41.04 61.5 58.7 56.2 51.9 15.85 15.63 15.44 15.26 15.09 14.95 Max P3dB is 42.7dBm at Zl = 12.73-2.95i ΩΩ ΩΩ Max PAE is 61.5% at Zl = 7.11+5.41i ΩΩ ΩΩ Max G3dB is 15.8dB at Zl = 13.98+2.09i ΩΩ ΩΩ Zs = 9.69-4.29i ΩΩ ΩΩ Smith-Chart Zo = 50 ΩΩ ΩΩ P3dB PAE3dB G3dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -0.2 -0.1 0.1 0.2 0.3 Load Pull 3GHz, 28V, 100mA, 25 °C 42.89 42.55 42.24 41.96 41.7 41.46 41.25 64.14 61.84 59.74 57.84 56.1 53.08 12.79 12.65 12.52 12.4 12.29 12.1 Max P3dB is 42.9dBm at Zl = 12.36-8.32i ΩΩ ΩΩ Max PAE is 64.1% at Zl = 10.68+0.33i ΩΩ ΩΩ Max G3dB is 12.8dB at Zl = 14.79-5.01i ΩΩ ΩΩ Zs = 10.11-10.06i ΩΩ ΩΩ Smith-Chart Zo = 50 ΩΩ ΩΩ P3dB PAE3dB G3dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -0.4 -0.3 -0.2 -0.1 0.1 Load Pull 4GHz, 28V, 100mA, 25 °C 42.93 42.66 42.41 42.19 41.98 41.79 40.98 41.62 63.78 61.11 58.68 56.46 54.44 52.61 50.94 13.29 13.07 12.87 12.68 12.52 12.23 Max P3dB is 42.9dBm at Zl = 15.97-13.09i ΩΩ ΩΩ Max PAE is 63.8% at Zl = 8.75-11.32i ΩΩ ΩΩ Max G3dB is 12.7dB at Zl = 17.84-8.5i ΩΩ ΩΩ Zs = 4.44-19.62i ΩΩ ΩΩ Smith-Chart Zo = 50 ΩΩ ΩΩ P3dB PAE3dB G3dB

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 7 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 -1.2 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.1 Load Pull 5GHz, 28V, 100mA, 25 °C 42.99 42.33 41.73 41.18 41.18 40.68 60.8 56.8 53.2 49.9 46.9 44.2 41.7 11.17 10.61 10.11 9.644 9.224 8.492 Max P3dB is 43dBm at Zl = 15.89-21.11i ΩΩ ΩΩ Max PAE is 60.8% at Zl = 8.22-20.29i ΩΩ ΩΩ Max G3dB is 11.2dB at Zl = 9-11.4i ΩΩ ΩΩZs = 8.71-26.25i ΩΩ ΩΩ Smith-Chart Zo = 50 ΩΩ ΩΩ P3dB PAE3dB G3dB -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 Load Pull 6GHz, 28V, 100mA, 25 °C 43.03 42.4 41.83 41.3 40.82 40.39 60.67 60.67 57.06 53.76 50.76 48.03 45.55 9.968 9.522 9.522 9.968 9.522 9.116 9.116 Max P3dB is 43dBm at Zl = 28.21-29.07i ΩΩ ΩΩ Max PAE is 60.7% at Zl = 7.13-29.9i ΩΩ ΩΩ Max G3dB is 10dB at Zl = 8.19-20.86i ΩΩ ΩΩ Zs = 14.17-41.27i ΩΩ ΩΩ Smith-Chart Zo = 50 ΩΩ ΩΩ P3dB PAE3dB G3dB

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 8 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance (1,2 ,3 ) Notes: 1. Pulsed signal with 100uS pulse width and 20% dut y cycle 2. See page 15 for load pull and source pull refere nce planes. 3. Performance is measured at device reference plan es. 30 31 32 33 34 35 36 37 38 39 40 41 42 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 1000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Power Tuned Zs = 8.30+j13.8 Ω Zl = 13.8+j5.57Ω 32 33 34 35 36 37 38 39 40 41 42 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 2000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Power Tuned Zs = 9.64-j4.29 Ω Zl = 12.7-j2.95Ω 30 31 32 33 34 35 36 37 38 39 40 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 1000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Efficiency Tuned Zs = 8.30+j13.8 Ω Zl = 17.3+j11.9Ω 32 33 34 35 36 37 38 39 40 41 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 2000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Efficiency Tuned Zs = 9.69-j4.29 Ω Zl = 7.11+j5.41Ω

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 9 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance (1,2 ,3 ) 25 27 29 31 33 35 37 39 41 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 3000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Power Tuned Zs = 10.1-j10.1 Ω Zl = 12.4-j8.32Ω 25 27 29 31 33 35 37 39 41 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 3000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Efficiency Tuned Zs = 10.1-j10.1 Ω Zl = 10.7+j0.33Ω 29 31 33 35 37 39 41 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 4000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Power Tuned Zs = 4.44-j19.6 Ω Zl = 16.0-j13.1Ω 29 31 33 35 37 39 41 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 4000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Efficiency Tuned Zs = 4.44-j19.6 Ω Zl = 8.75-j11.3Ω

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 10 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance (1,2 ,3 ) 29 31 33 35 37 39 41 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 5000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Efficiency Tuned Zs = 8.71-j26.3 Ω Zl = 8.22-j20.3Ω 29 31 33 35 37 39 41 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 5000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Power Tuned Zs = 8.71-j26.3 Ω Zl = 15.9-j21.1Ω 25 27 29 31 33 35 37 39 41 43 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 6000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Power Tuned Zs = 14.2-j41.3 Ω Zl = 28.2-j29.1Ω 25 27 29 31 33 35 37 39 41 PAE [%] Gain [dB] Pout [dBm] T2G6001528-SG Gain and PAE vs. Pout 6000MHz, 100uS, 20%, Vds = 28V, Idq= 100mA, Efficiency Tuned Zs = 14.2-j41.3 Ω Zl = 7.13-j29.9Ω

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 11 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Evaluation Board Performance Over Temperature (1, 2) Performance measured on TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board Notes: 1. Test Conditions: V DS = 28 V, I DQ = 100 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20% 41.2 41.4 41.6 41.8 42.0 42.2 42.4 42.6 P3dB [dBm] Frequency [GHz] P3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C 100uS, 20%, Vds = 28V, Idq= 100mA 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 G3dB [dB] Frequency [GHz] G3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C 100uS, 20%, Vds = 28V, Idq= 100mA PAE3dB [%] Frequency [GHz] PAE3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C 100uS, 20%, Vds = 28V, Idq= 100mA

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 12 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Evaluation Board Performance At 25° C(1, 2) Performance measured on TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board Notes: 1. Test Conditions: V DS = 28 V, I DQ = 100 mA, 25° C 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % PAE3dB [%] P3dB [W], G3dB [dB] Frequency [GHz] P3dB, G3dB, PAE3dB vs. Frequency at 25° C P3dB G3dB PAE3dB 100uS, 20%, Vds = 28V, Idq= 100mA

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 13 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Application Circuit Bias-down Procedure Turn off RF signal Turn off V D and wait 1 second to allow drain capacitor dissipation Turn off V G Bias-up Procedure Set gate voltage (V G) to -5.0V Set drain voltage (V D) to 28 V Slowly increase V G until quiescent I D is 100 mA. Apply RF signal

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 14 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1, C2 18 pF 2 ATC 600S1802BT250XT C3 10 uF 1 TDK C1632X5ROJ106M130AC C4 1.0 uF 1 AVX 18121C105KAT2A C5 220 uF 1 Nichicon UWT1H221MNL1GS R1, R3 10 Ω 2 Panasonic ERJ-3EKF10R0V R2 1k Ω 1 Panasonic ERJ-6ENF1001V R4, R5 Do Not Place R6 Do Not Place L1 22 nH 1 Coilcraft 0805CS-220X_L_

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 15 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Pin Layout Note: The T2G6001528-SG will be marked with the “1528S” d esignator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, and the “MXXX” is the production lot number. Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output to be matched to 50 ohms; see EVB Layout on page 14

as an example.

2 VG / RF IN Gate voltage / RF Input to be matched to 50 ohms; see EVB Layout on page 14 as

an example. 3 Flange Source connected to ground; see EVB Layout on page 14 as an example. Notes: Thermal resistance measured to back side of package

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 16 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Mechanical Information All dimensions are in inches. Note: Unless otherwise noted, all dimention tolerances are +/-0.005. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 ° C reflow temperature) and tin-lead (maximum 245° C reflow temperature) soldering processes.

Datasheet: Rev © 2014 Product Compliance ESD Sensitivity Ratings ESD Rating: Value: Test: Standard: MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J ECCN US Department of Commerce Recommended Soldering Temperature Profile Datasheet: Rev © 2014 Product Compliance ESD Sensitivity Ratings ESD Rating: Value: Test: Standard: MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J ECCN US Department of Commerce Recommended Soldering Temperature Profile Datasheet: Rev © 2014 TriQuint Product Compliance ESD Sensitivity Ratings ESD Rating: Value: Standard: MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J ECCN US Department of Commerce Recommended Soldering Temperature Profile Datasheet: Rev TriQuint Product Compliance ESD Sensitivity Ratings Caution! ESD ESD Rating: Standard: MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile Datasheet: Rev A TriQuint Product Compliance ESD Sensitivity Ratings Caution! ESD Class 1A Passes Human Body Model (HBM) JEDEC Standard JESD22 MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile A- 02 Product Compliance ESD Sensitivity Ratings Caution! ESD Class 1A Passes Human Body Model (HBM) JEDEC Standard JESD22 MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile 02 -27 Product Compliance ESD Sensitivity Ratings Caution! ESD Class 1A Passes ≥ Human Body Model (HBM) JEDEC Standard JESD22 Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile 27 -14 Product Compliance ESD Sensitivity Ratings Caution! ESD Class 1A ≥ 40 Human Body Model (HBM) JEDEC Standard JESD22 Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile Product Compliance ESD Sensitivity Ratings Caution! ESD -Sensitive Device ≥ 40 0 V min. Human Body Model (HBM) JEDEC Standard JESD22 Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile Product Compliance ESD Sensitivity Ratings Sensitive Device 0 V min. Human Body Model (HBM) JEDEC Standard JESD22 Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at JEDEC standard IPC/JEDEC J -STD US Department of Commerce EAR99 Recommended Soldering Temperature Profile Product Compliance Information ESD Sensitivity Ratings Sensitive Device 0 V min. Human Body Model (HBM) JEDEC Standard JESD22 Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at STD EAR99 Recommended Soldering Temperature Profile Information ESD Sensitivity Ratings Sensitive Device Human Body Model (HBM) JEDEC Standard JESD22 Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at STD -020. EAR99 Recommended Soldering Temperature Profile Information Sensitive Device Human Body Model (HBM) JEDEC Standard JESD22 -A114 The part is rated Moisture Sensitivity Level 3 at 020. Recommended Soldering Temperature Profile Information Sensitive Device A114 The part is rated Moisture Sensitivity Level 3 at Recommended Soldering Temperature Profile Information Sensitive Device A114 The part is rated Moisture Sensitivity Level 3 at Recommended Soldering Temperature Profile 15 W, Information Sensitive Device The part is rated Moisture Sensitivity Level 3 at Recommended Soldering Temperature Profile W, 28V, DC The part is rated Moisture Sensitivity Level 3 at 260° C per Recommended Soldering Temperature Profile 28V, DC - 17 260° C per Recommended Soldering Temperature Profile 28V, DC 17 of 18 260° C per Recommended Soldering Temperature Profile 28V, DC 18 - Solderability Compatible with the latest free solder, 260° C RoHs Compliance This part directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: 260° C per Recommended Soldering Temperature Profile 28V, DC – Solderability Compatible with the latest free solder, 260° C RoHs Compliance This part directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Recommended Soldering Temperature Profile – 6 GHz, GaN RF Power Transistor Solderability Compatible with the latest free solder, 260° C RoHs Compliance This part directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP
PFOS Free
SVHC Free Recommended Soldering Temperature Profile

6 GHz, GaN RF Power Transistor

Compatible with the latest free solder, 260° C RoHs Compliance This part directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP PFOS Free SVHC Free Compatible with the latest free solder, 260° C RoHs Compliance This part is directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP -A (C PFOS Free SVHC Free Compatible with the latest free solder, 260° C RoHs Compliance compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free A (C PFOS Free SVHC Free T2G6001528 Disclaimer: Subject to change without notice Solderability Compatible with the latest free solder, 260° C RoHs Compliance compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free A (C 15 H PFOS Free SVHC Free T2G6001528 Disclaimer: Subject to change without notice Compatible with the latest RoHs Compliance compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) Antimony Free H12 Br T2G6001528 Disclaimer: Subject to change without notice Compatible with the latest RoHs Compliance compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) Br 40 T2G6001528 Disclaimer: Subject to change without notice Compatible with the latest version of J compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) 02) Free T2G6001528 Disclaimer: Subject to change without notice version of J compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) ) Free T2G6001528 Disclaimer: Subject to change without notice www.triquint.com version of J compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) ) Free T2G6001528 Disclaimer: Subject to change without notice www.triquint.com version of J -STD compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) T2G6001528 Disclaimer: Subject to change without notice www.triquint.com STD compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) T2G6001528 Disclaimer: Subject to change without notice www.triquint.com STD -020, Lead compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes: T2G6001528 -SG Disclaimer: Subject to change without notice www.triquint.com 020, Lead compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). SG Disclaimer: Subject to change without notice www.triquint.com 020, Lead compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). SG Disclaimer: Subject to change without notice www.triquint.com 020, Lead compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous

15W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A- 02-27-14 - 18 of 18 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Contact Information For the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the informat ion contained herein. TriQuint assumes no responsibility or liability wha tsoever for any of the information contained herein. TriQuint assumes no responsibility or liab ility whatsoever for the use of the information con tained herein. The information contained herein is provided "AS IS, WHE RE IS" and with all faults, and the entire risk asso ciated with such information is entirely with the user. All information contained herein is subject to chan ge without notice. Customers should obtain and verify the latest relev ant information before placing orders for TriQuint products. The information contained herein or any use of such inf ormation does not grant, explicitly or implicitly, to any party a ny patent rights, licenses, or any other intellectual property rights, whether with regard to such inform ation itself or anything described by such information. TriQuint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure would reasonably be expected to cause s evere personal injury or death.

Product Information

T2G6001528-SG specifications and overview.

Summary

15W, 28V, DC ??6 GHz, GaN RF Power Transistor

Description

15W, 28V, DC ??6 GHz, GaN RF Power Transistor

Source title T2G6001528-SG Datasheet(PDF) - TriQuint Semiconductor

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