T2G6001528-Q3-EVB1

T2G6001528-Q3_15 TRIQUINT | Alldatasheet

Document overview

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Technical content

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 1 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com

Applications

• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers

Ordering Information

T2G6001528-Q3 EAR99 Packaged part Flangeless T2G6001528-Q3- EVB1 EAR99 5.0 – 6.0 GHz Evaluation Board Product Features

• Frequency: DC to 6 GHz
• Output Power (P 3dB ): 19 W at 5.2 GHz
• Linear Gain: >9 dB at 5.2 GHz
• Operating Voltage: 28 V
• Low thermal resistance package Functional Block Diagram Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

The TriQuint T2G6001528-Q3 is an 18W (P 3dB ) discrete GaN on SiC HEMT which operates from DC to 6.0 GHz. The device is constructed with TriQuint’s proven TQGaN25 process , which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of few er amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request.

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 2 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Breakdown Voltage (BV DG ) 100 V Gate Voltage Range (V G) -7 to 0 V Drain Current (I D) 5 A Gate Current (I G) -5 to 14 mA Power Dissipation (P D) 28 W RF Input Power, CW, T = 25° C (P IN ) 36 dBm Channel Temperature (T CH ) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (V D) 28 V (Typ.) Drain Quiescent Current (I DQ ) 50 mA (Typ.) Peak Drain Current ( I D) 1.4 A (Typ.) Gate Voltage (V G) -3.2 V (Typ.) Channel Temperature (T CH ) 225 ° C (Max) Power Dissipation, CW (P D) 20.9 W (Max) Power Dissipation, Pulse (P D) 22.5 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. RF Characterization – Load Pull Performance at 6.0 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 11.3 dB P3dB Output Power at 3 dB Gain Compression 19.0 W DE 3dB Drain Efficiency at 3 dB Gain Compression 66.0 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 56.2 % G3dB Gain at 3 dB Compression 8.3 dB Notes: 1. VDS = 28 V, I DQ = 50 mA; Pulse: 100µs, 20% RF Characterization – Load Pull Performance at 3.0 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 16.5 dB P3dB Output Power at 3 dB Gain Compression 19.6 W DE 3dB Drain Efficiency at 3 dB Gain Compression 69.6 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 66.4 % G3dB Gain at 3 dB Compression 13.5 dB Notes: 1. VDS = 28 V, I DQ = 50 mA; Pulse: 100µs, 20%

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 3 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com RF Characterization – Performance at 5.2 GHz (1, 2) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 10.5 dB P3dB Output Power at 3 dB Gain Compression 17.3 W DE 3dB Drain Efficiency at 3 dB Gain Compression 48.0 % G3dB Gain at 3 dB Compression 7.5 dB Notes: 1. Performance at 5.2 GHz in the 5.0 to 6.0 GHz Evaluation Board 2. VDS = 28 V, I DQ = 50 mA; Pulse: 100µs, 20% RF Characterization – Narrow Band Performance at 3. 50 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 28 V, I DQ = 50 mA Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 28 V, I DQ = 50 mA, CW at P 1dB

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 4 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC ) DC at 85 ° C Case 6.7 ºC/W Channel Temperature (TCH ) 225 ° C Notes: Thermal resistance measured to bottom of package, CW. Median Lifetime Maximum Channel Temperature TBASE = 85° C, P D = 22.5 W

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 5 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits w hen placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedanc es presented to the device via an RF circuit or loa d-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: V DS = 28 V, I DQ = 50 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 6 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. 33 34 35 36 37 38 39 40 41 42 43 16 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 4.57 + j8.99 Ω ZL = 11.37 - j2.11 Ω 33 34 35 36 37 38 39 40 41 42 43 14 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 2.46 + j3.40 Ω ZL = 14.14 + j0.70 Ω 33 34 35 36 37 38 39 40 41 42 43 10 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 4.14 - j2.40 Ω ZL = 12.51 + j1.04 Ω 33 34 35 36 37 38 39 40 41 42 43 7 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 6.84 - j7.48 Ω ZL = 9.86 - j2.97 Ω 33 34 35 36 37 38 39 40 41 42 43 7 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 6.83 - j11.52 Ω ZL = 13.34 - j6.40 Ω 33 34 35 36 37 38 39 40 41 42 43 5 33 34 35 36 37 38 39 40 41 42 43 0 33 34 35 36 37 38 39 40 41 42 43 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T2G6001528-Q3 Gain DrEff. and PAE vs. Pout

6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA

DrEff. PAE ZS = 13.51 - j15.66 Ω ZL = 12.50 - j14.22 Ω

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 7 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Performance Over Temperature (1, 2) Performance measured in TriQuint’s 5.0 GHz to 6.0 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 28 V, I DQ = 50 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 8 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: V DS = 28 V, I DQ = 50 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % Application Circuit Bias-up Procedure Set gate voltage (V G) to -5.0V Set drain voltage (V D) to 28 V Slowly increase V G until quiescent I D is 50 mA. Apply RF signal Bias-down Procedure Turn off RF signal Turn off V D and wait 1 second to allow drain capacitor dissipation Turn off V G

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 9 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO3203, ɛr = 3.02. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1, C14 100 pF 2 ATC 100A101JW500XC C2, C8 2400 pF 1 Dielectric Labs C08BL242X-5UN-XOB C3, C9 100 pF 2 ATC 100B101GT500X C4, C10 0.01 uF 2 Kemet C1206C103K1RACTU C5, C11 0.1 uF 2 Kemet C1206C104K1RACTU C6, C12 1.0 uF 2 AVX 1812C105KAT2A C7, C13 22 uF 2 Sprague 226K035AT L1 5.4 nH 1 Coilcraft 0906-5JL L2 9.85 nH 1 Coilcraft 1606-9JLB R1 12.1Ohms 1 Vishay CRC120612R1FKEA

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 10 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Pin Layout Note: The T2G6001528-Q3 will be marked with the “15282” d esignator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, and the “MXXX” is the production lot number. Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see E VB Layout on page 9 as an

example.

2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an

example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Notes: Thermal resistance measured to bottom of package

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 11 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Mechanical Information All dimensions are in millimeters. Unless specified otherwise, tolerances are ± 0.127. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 ° C reflow temperature) and tin-lead (maximum 245° C reflow temperature) soldering processes.

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 12 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: Passes ≥ 250 V to < 500 V max. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Solderability Compatible with the latest version of J-STD- 020, Lead free solder, 260° C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazar dous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C 15 H12 Br 402) Free
• PFOS Free
• SVHC Free MSL Rating Level 3 at +260 ° C convection reflow The part is rated Moisture Sensitivity Level 3 at 2 60° C per JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile

18W, 28V, DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev B 12-30-13 - 13 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Contact Information For the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the informat ion contained herein. TriQuint assumes no responsibility or liability wha tsoever for any of the information contained herein. TriQuint assumes no responsibility or liab ility whatsoever for the use of the information con tained herein. The information contained herein is provid ed "AS IS, WHERE IS" and with all faults, and the e ntire risk associated with such information is entirely with the user. All information contained herein is subject to chan ge without notice. Customers should obtain and verify the latest relev ant informa tion before placing orders for TriQuint products. The information contained herein or any use of such inf ormation does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. TriQuint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure w ould reasonably be expected to cause severe persona l injury or death.