T1P2701012-SP TRIQUINT | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
— Excep ti onal Instantaneous band-width performance from 500MHz – 3GHz — Increased e ffi ciency results in signifi cant advantages — Smaller and lighter systems — Reduced system component costs — Reduced energy consump ti on — Typical Performance ra ti ngs — Wide-Band 500MHz-3GHz (as tested in TriQuint Wideband Fixture) — 10dB gain — 50% E ffi ciency — 10Wa tt P1dB — Narrow Band up to 3GHz — 12dB gain — 60% e ffi ciency — 15Wa tt P1dB Table 1. Maximum Rati ngs and output power shall not exceed PD. Table 2. Thermal Informati on
10 W, 12V, 500 MHz—3GHz, Powerband TM pHEMT RF Power Transistor
www.triquint.com/powerband Preliminary Data Sheet Subject to Change
Electrical Characteristics
Recommended operating conditions apply unless otherwise specifi ed: TA = 25 °C. Table 3. dc Characteristi cs Table 4. RF Characteristi cs — No degradation in output power.
www.triquint.com/powerband Preliminary Data Sheet Subject to Change Typical Instantaneous Wideband Peformance Data, 500MHz-2.7GHz (tested in TriQuint Wideband Fixture)
www.triquint.com/powerband Preliminary Data Sheet Subject to Change Package Dimensions Note: All dimensions in inches. Scale 8:1 .040 .360 .351 .090 .320 45° .085 X .087 .350 .063 .006 .090