T1L2003028-SP TRIQUINT | Alldatasheet
Document overview
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Technical content
Features
— Excep ti onal Instantaneous band-width performance from 500MHz – 2GHz — Increased e ffi ciency results in signifi cant advantages — Smaller and lighter systems — Reduced system component costs — Reduced energy consump ti on — Typical Performance ra ti ngs — Wide-Band 500MHz-2GHz (as tested in TriQuint Wideband Fixture) — 10dB gain — 45% E ffi ciency — 30Wa tt P1dB — Narrow Band up to 2GHz — 14dB gain — 59% e ffi ciency — 45Wa tt P1dB Table 1. Thermal Characteristi cs Table 2. Absolute Maximum Rati ngs* rati ngs for extended periods can adversely aff ect device reliability. Table 3. ESD Rati ng* electrical overstress (EOS) during all handling, assembly, and test operati ons. Cauti on: MOS devices are suscep ti ble to damage from electrostati c charge.
30 W, 28V, 500 MHz—2 GHz, Powerband TM LDMOS RF Power Transistor
www.triquint.com/powerband Preliminary Data Sheet Subject to Change
Electrical Characteristics
Recommended operating conditions apply unless otherwise specifi ed: TC = 30 °C. Table 4. dc Characteristi cs Table 5. RF Characteristi cs — No degradation in output power.
www.triquint.com/powerband Preliminary Data Sheet Subject to Change Typical Instantaneous Wide-Band Performance Data, 500MHz-2GHz (tested in TriQuint wide-band fi xture)
www.triquint.com/powerband Preliminary Data Sheet Subject to Change Package Dimensions Note: All dimensions in inches. Scale 8:1 .040 .360 .351 .090 .320 45° .085 X .087 .350 .063 .006 .090