T1G4020036-FS_15 TRIQUINT | Alldatasheet

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Technical content

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 1 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Applications

  • Military radar
  • Civilian radar
  • Professional and military radio communications
  • Test instrumentation
  • Wideband or narrowband amplifiers
  • Jammers

Ordering Information

T1G4020036-FS 3A001b.3.b Packaged part Flangeless T1G4020036-FS- EVB1 EAR99 2.9-3.3 GHz Evaluation Board Functional Block Diagram Pin Configuration Pin No. Label 1, 4 VD / RF OUT 2, 5 VG / RF IN Flange Source General Description The TriQuint T1G4020036-FS is a 240 W Peak (48 W Avg.) (P 3dB ) discrete GaN on SiC HE MT which operates from DC to 3.5 GHz. The device is cons tructed with TriQuint’s proven TQGaN25HV process, which features advanced field plate techniques to optimize power a nd efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line- ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Product Features

  • Frequency: DC to 3.5 GHz
  • Output Power (P 3dB ): 260 W Peak (48 Watts Avg.) at 2.9 GHz
  • Linear Gain: 16 dB typical at 2.9 GHz
  • Operating Voltage: 36 V
  • Low thermal resistance package

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 2 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com RF Characterization – Load Pull Performance at 3.1 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 36 V, I DQ = 260 mA (half device) Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 16.1 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 155 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compresion, Efficiency Tuned 64 % G3dB Gain at 3 dB Compression, Power Tuned 13.1 dB Notes: 1. Pulse: 100µs pulse width, 20% duty cycle RF Characterization – Load Pull Performance at 3.5 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 36 V, I DQ = 260 mA (half device) Symbol Parameter Min Typical Max Units GLIN Linear Gain, Power Tuned 16.8 dB P3dB Output Power at 3 dB Gain Compression, Power Tuned 140 W PAE 3dB Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 58.5 % G3dB Gain at 3 dB Compression, Power Tuned 13.8 dB Notes: 1. Pulse: 100µs pulse width, 20% duty cycle Absolute Maximum Ratings Parameter Value Breakdown Voltage (BVDG ) 145 V min. Gate Voltage Range (V G) -10 to 0 V Drain Current (I D) 24 A Gate Current (I G) -57.6 to 67.2 mA Power Dissipation (CW PD) 236 W RF Input Power, CW, T = 25° C (P IN ) 47.5 dBm Channel Temperature (T CH ) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (V D) 36 V (Typ.) Drain Quiescent Current (I DQ ) 520 mA (Typ.) Peak Drain Current ( I D), Pulse 12 A (Typ.) Gate Voltage (V G) -2.9 V (Typ.) Channel Temperature (T CH ) 250 ° C (Max.) Power Dissipation (P D), CW, 85° C Tbase 211 W (Max) Power Dissipation (P D), Pulse, 85° Tbase 374 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Pulse signal: 100uS pulse width, 20% duty cycle

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 3 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com RF Characterization – Narrow Band Performance at 2. 9 GHz (1,2,3) Test conditions unless otherwise noted: T A = 25 ° C, V D = 36 V, I DQ = 520 mA (combined), Pulsed Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. Performance at 2.9 GHz in the 2.9 to 3.3 GHz Eva luation Board 2. Pulse: 100µs, 20% 3. Tested input power established at P3dB at power match condition RF Characterization – Performance at 2.9 GHz (1, 2) Test conditions unless otherwise noted: T A = 25 ° C, V D = 36 V, I DQ = 520 mA (combined) Symbol Parameter Min Typical Max Units GLIN Linear Gain 16.1 dB P3dB Output Power at 3 dB Gain Compression 260.0 W DE 3dB Drain Efficiency at 3 dB Gain Compression 52.0 % G3dB Gain at 3 dB Compression 13.1 dB Notes: 1. Performance at 2.9 GHz in the 2.9 to 3.3 GHz Eva luation Board 2. Pulse: 100µs, 20%

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 4 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC ) Tbase = 85° C, Pdiss = 211W CW 0.78 ° C/W Channel Temperature (TCH ) 250 ° C Thermal Resistance ( θJC ) Tbase = 85° C, Pdiss = 230.4W Pulse: 100uS, 20% 0.40 ° C/W Channel Temperature (T CH ) 177 ° C Thermal Resistance ( θJC ) Tbase = 85° C, Pdiss = 230.4W Pulse: 100uS, 10% 0.36 ° C/W Channel Temperature (T CH ) 168 ° C Thermal Resistance ( θJC ) Tbase = 85° C, Pdiss = 230.4W Pulse: 300uS, 20% 0.47 ° C/W Channel Temperature (T CH ) 194 ° C Thermal Resistance ( θJC ) Tbase = 85° C, Pdiss = 230.4W Pulse: 300uS, 10% 0.43 ° C/W Channel Temperature (T CH ) 185 ° C Notes: Thermal resistance measured to bottom of package. Median Lifetime

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 5 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Maximum Channel Temperature TBASE = 85° C, P D = 230 W 100.0 120.0 140.0 160.0 180.0 200.0 220.0 240.0 260.0 280.0 Maximum Channel Temperature ( oC) Pulse Width (sec) Maximum Channel Temperature Tbase = 85 oC, Pdiss = 230 W 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 6 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances p resented to the device via an RF circuit or load- pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the device only. Notes: 1. Only half of device was load pulled. Load-pull reference planes are shown on page 18. 2. Load-pull condition: Vds = 36V, Idq = 260mA, Pul sed: 100uS pulse width, 20% duty cycle 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -0.3 -0.2 -0.1 0.1 0.2 Load Pull 2.7GHz, 36V, 260mA, 25 °C 51.7 51.3 50.8 50.5 50.3 50.1 49.9 49.7 58.3 55.7 53.3 47.2 45.6 44.1 13.9 13.6 13.3 12.7 12.5 12.2 11.9 Max P3dB is 51.7dBm at Zl = 2.5-2.05i ΩΩ ΩΩ Max PAE is 58.3% at Zl = 2.36-0.65i ΩΩ ΩΩ Max G3dB is 14.3dB at Zl = 2.42+1.41i ΩΩ ΩΩ Zs = 7.27-5.11i ΩΩ ΩΩ Smith-Chart Zo = 10 ΩΩ ΩΩ P3dB PAE3dB G3dB

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 7 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances p resented to the device via an RF circuit or load- pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the device only. Notes: 1. Only half of device was load pulled. Load-pull reference planes are shown on page 18. 2. Load-pull condition: Vds = 36V, Idq = 260mA, Pul sed: 100uS pulse width, 20% duty cycle 0.1 0.2 0.3 0.4 -0.2 -0.1 Load Pull 2.9GHz, 36V, 260mA, 25 °C 51.9 51.6 51.4 51.2 51.1 50.9 50.7 50.5 50.2 49.9 63.6 62.2 60.9 59.8 58.7 57.7 54.6 15.4 15.1 14.8 14.6 14.4 14.2 13.8 13.5 Max P3dB is 51.9dBm at Zl = 2.84-3.11i ΩΩ ΩΩ Max PAE is 63.6% at Zl = 2.09-1.37i ΩΩ ΩΩ Max G3dB is 15.4dB at Zl = 2.06-0.96i ΩΩ ΩΩ Zs = 12.05-9.87i ΩΩ ΩΩ Smith-Chart Zo = 10 ΩΩ ΩΩ P3dB PAE3dB G3dB

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 8 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances p resented to the device via an RF circuit or load- pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the device only. Notes: 1. Only half of device was load pulled. Load-pull reference planes are shown on page 18. 2. Load-pull condition: Vds = 36V, Idq = 260mA, Pul sed: 100uS pulse width, 20% duty cycle 0.1 0.2 0.3 0.4 0.5 0.6 -0.4 -0.3 -0.2 -0.1 Load Pull 3.1GHz, 36V, 260mA, 25 °C 51.3 50.7 50.4 50.1 49.6 49.2 48.9 48.5 58.5 56.5 54.8 53.1 51.6 50.3 47.9 16.3 15.9 15.5 15.2 14.9 14.3 13.7 13.3 13.1 Max P3dB is 51.3dBm at Zl = 3.32-3.5i ΩΩ ΩΩ Max PAE is 58.5% at Zl = 2.1-1.95i ΩΩ ΩΩ Max G3dB is 16.3dB at Zl = 1.38-1.2i ΩΩ ΩΩ Zs = 16.65-1.96i ΩΩ ΩΩ Smith-Chart Zo = 10 ΩΩ ΩΩ P3dB PAE3dB G3dB

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 9 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances p resented to the device via an RF circuit or load- pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the device only. Notes: 1. Only half of device was load pulled. Load-pull reference planes are shown on page 18. 2. Load-pull condition: Vds = 36V, Idq = 260mA, Pul sed: 100uS pulse width, 20% duty cycle 0.1 0.2 0.3 0.4 0.5 0.6 -0.4 -0.3 -0.2 -0.1 Load Pull 3.3GHz, 36V, 260mA, 25 °C 51.3 50.7 50.5 50.3 50.1 49.9 49.6 49.3 49 54.9 52.8 49.3 47.8 46.4 45.1 43.9 41.9 15.5 14.6 14.3 13.9 13.6 13.1 12.8 12.6 Max P3dB is 51.3dBm at Zl = 2.29-3.67i ΩΩ ΩΩ Max PAE is 54.9% at Zl = 2.14-2.21i ΩΩ ΩΩ Max G3dB is 15.5dB at Zl = 1.41-2.15i ΩΩ ΩΩ Zs = 7.12+0.75i ΩΩ ΩΩ Smith-Chart Zo = 10 ΩΩ ΩΩ P3dB PAE3dB G3dB

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 10 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances p resented to the device via an RF circuit or load- pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the device only. Notes: 1. Only half of device was load pulled. Load-pull reference planes are shown on page 18. 2. Load-pull condition: Vds = 36V, Idq = 260mA, Pul sed: 100uS pulse width, 20% duty cycle 0.1 0.2 0.3 0.4 0.5 0.6 -0.4 -0.3 -0.2 -0.1 Load Pull 3.5GHz, 36V, 260mA, 25 °C 51.1 50.5 49.6 49.2 48.8 48.5 48.2 47.7 49.8 48.4 47.1 45.9 44.9 43.9 45.9 44.9 43.9 42.2 15.3 15 14.8 14.5 14.1 13.8 13.5 13.2 Max P3dB is 51.1dBm at Zl = 2.14-3.97i ΩΩ ΩΩ Max PAE is 49.8% at Zl = 1.97-2.4i ΩΩ ΩΩ Max G3dB is 15.3dB at Zl = 1.32-2.52i ΩΩ ΩΩ Zs = 3.97+2.44i ΩΩ ΩΩ Smith-Chart Zo = 10 ΩΩ ΩΩ P3dB PAE3dB G3dB

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 11 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance (1,2) 1. Only half of the device was tested. Impedances were presented at device reference planes. 2. Drive-up condition: Vds = 36V, Idq = 260mA, Puls ed: 100uS pulse width, 20% duty cycle 39 40 41 42 43 44 45 46 47 48 49 50 51 52 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 12.1-j9.87 Ω Zl = 2.84-j3.11Ω 2.9GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned 40 41 42 43 44 45 46 47 48 49 50 51 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 12.1-j9.87 Ω Zl = 2.09-j1.37Ω 2.9GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned 39 40 41 42 43 44 45 46 47 48 49 50 51 52 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 7.27-j5.11 Ω Zl = 2.50-j2.05Ω 2.7GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned 40 41 42 43 44 45 46 47 48 49 50 51 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 7.27-j5.11 Ω Zl = 2.36-j0.65Ω 2.7GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 12 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance (1,2) 1. Only half of the device was tested. Impedances were presented at device reference planes. 2. Drive-up condition: Vds = 36V, Idq = 260mA, Puls ed: 100uS pulse width, 20% duty cycle 39 40 41 42 43 44 45 46 47 48 49 50 51 52 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 16.7-j1.96 Ω Zl = 3.32-j3.50Ω 3.1GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned 40 41 42 43 44 45 46 47 48 49 50 51 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 16.7-j1.96 Ω Zl = 2.10-j1.95Ω 3.1GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 7.12+j0.75 Ω Zl = 2.29-j3.67Ω 3.3GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned 38 39 40 41 42 43 44 45 46 47 48 49 50 51 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 7.12+j0.75 Ω Zl = 2.14-j2.21Ω 3.3GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 13 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance (1,2) (1) Only half of the device was tested. Impedances were presented at device reference planes. (2) Drive-up condition: Vds = 36V, Idq = 260mA, Pul sed: 100uS pulse width, 20% duty cycle T1G4020036 -FL Gain and PAE vs. Pout 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 3.97+j2.44 Ω Zl = 2.14-j3.97Ω 3.5GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned 40 41 42 43 44 45 46 47 48 49 50 PAE [%] Gain [dB] Pout [dBm] T1G4020036 Gain and PAE vs. Pout Zs = 3.97+j2.44 Ω Zl = 1.97-j2.40Ω 3.5GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 14 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com EVB Performance Over Temperature (1, 2) Performance measured in TriQuint’s 2.9 GHz to 3.3 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 36 V, I DQ = 520 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20% 180 190 200 210 220 230 240 250 260 P3dB [W] Frequency [GHz] P3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C G3dB [dB] Frequency [GHz] G3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85°C PAE3dB [%] Frequency [GHz] PAE3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 55°C 85 °C

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 15 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com EVB Performance Over Temperature (1, 2) Performance measured in TriQuint’s 2.9 GHz to 3.3 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 36 V, I DQ = 520 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20% PAE [%] Frequency [GHz] PAE vs. Frequency at 25° C 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 160 170 180 190 200 210 220 230 240 250 260 Gain [dB] Power [W] Frequency [GHz] Output Power and Gain vs. Frequency @ 25 /uni00B0C Power Gain

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 16 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Application Circuit Bias-down Procedure Turn off RF signal Turn off V D and wait 1 second to allow drain capacitor dissipation Turn off V G Bias-up Procedure Set gate voltage (V G) to -5.0V Set drain voltage (V D) to 36 V Slowly increase V G until quiescent I D is 520 mA. Apply RF signal

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 17 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C4, C5 10uF, 6.3V 2 TDK C1632X5R0J106M130AC C10, C11 1uF, 50V 2 AVX 18121C105KAT2A C12, C13 220uF, 50V 2 United Chemi-Con EMVY500ADA221MJA0G C8, C9 2.7pF 2 ATC 600F2R7AT250X C2, C3 5.6pF 2 ATC 600S5R6AT250X C1 1.6pF 1 ATC 600S1R6AT250X C14 0.8pF 1 ATC 600S0R8AT250X C6, C7 0.5pF 2 ATC 600S0R5AT250X R3, R4 10Ohms 2 Vishay CRCW060310R0FKEA R1, R2 0.001Ohms 2 Stackpole Electronics CSNL1206FT1L00 L1, L2 22nH 2 Coilcraft 0805CS-220X_L L3, L4 6.6nH 2 Coilcraft GA3093 Connectors SMA 2 Gigalane 1101055

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 18 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Pin Layout Note: The T1G4020036-FS will be marked with the “20036” d esignator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number. Pin Description Pin Symbol Description 1, 4 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an example. 2, 5 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Note: Thermal resistance measured to bottom of package

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 19 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Mechanical Information All dimensions are in inches. Notes: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin- lead soldering processes. Unless otherwise noted all tolerances are ±0.005.

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 20 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1B Value: Passes ≥ 950V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Solderability Compatible with the latest version of J-STD- 020, Lead free solder, 260° C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

  • Lead Free
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C 15 H12 Br 402) Free
  • PFOS Free
  • SVHC Free MSL Rating The part is rated Moisture Sensitivity Level 3 at 2 60° C per JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 21 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Contact Information For the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the informat ion contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before p lacing orders for TriQuint products. The informati on contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe perso nal injury or death.