T1G4004532-FSEVB1

T1G4004532-FS_15 TRIQUINT | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 13

Technical content

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 1 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Applications

• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers

Ordering Information

T1G4004532-FS EAR99 Packaged part Flangeless T1G4004532-FS- EVB1 EAR99 2.7-3.5 GHz Evaluation Board Product Features

• Frequency: DC to 3.5 GHz
• Output Power (P 3dB ): 45 W at 3.3 GHz
• Linear Gain: >19 dB at 3.3 GHz
• Operating Voltage: 32 V
• Low thermal resistance package Functional Block Diagram Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

The TriQuint T1G4004532-FS is a 45W (P 3dB ) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request.

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 2 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Value Breakdown Voltage (BV DG ) 100 V min. Gate Voltage Range (V G) -7 to 0 V Drain Current (I D) 7.0 A Gate Current (I G) -12.6 to 21 mA Power Dissipation, CW (P D) 61 W RF Input Power, CW, T = 25° C (P IN ) 41 dBm Channel Temperature (T CH ) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature -40 to 150 ° C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (V D) 32 V (Typ.) Drain Quiescent Current (I DQ ) 220 mA (Typ.) Peak Drain Current ( I D) 2.5 A (Typ.) Gate Voltage (V G) -2.9 V (Typ.) Channel Temperature (T CH ) 225 ° C (Max.) Power Dissipation, CW (P D) 44 W (Max) Power Dissipation, Pulse (P D) 68 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operating conditions are based on 100 usec, 20% unless otherwise specified. RF Characterization – Load Pull Performance at 3.5 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 32 V, I DQ = 220 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 20.0 dB P3dB Output Power at 3 dB Gain Compression 45.0 W DE 3dB Drain Efficiency at 3 dB Gain Compression 56.8 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 55.7 % G3dB Gain at 3 dB Compression 17.0 dB Notes: 1. VDS = 32 V, I DQ = 220 mA; Pulse: 100µs, 20% RF Characterization – Load Pull Performance at 1.0 GHz (1) Test conditions unless otherwise noted: TA = 25 ° C, V D = 32 V, I DQ = 220 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 23.4 dB P3dB Output Power at 3 dB Gain Compression 40.1 W DE 3dB Drain Efficiency at 3 dB Gain Compression 57.2 % PAE 3dB Power-Added Efficiency at 3 dB Gain Compression 56.7 % G3dB Gain at 3 dB Compression 20.4 dB Notes: 1. VDS = 32 V, I DQ = 220 mA; Pulse: 100µs, 20%

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 3 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com RF Characterization – Performance at 3.3 GHz (1, 2) Test conditions unless otherwise noted: T A = 25 ° C, V D = 32 V, I DQ = 220 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 19.5 dB P3dB Output Power at 3 dB Gain Compression 44.0 W DE 3dB Drain Efficiency at 3 dB Gain Compression 52.0 % G3dB Gain at 3 dB Compression 16.5 dB Notes: 1. Performance at 3.3 GHz in the 2.7 to 3.5 GHz Evaluation Board 2. VDS = 32 V, I DQ = 220 mA; Pulse: 100µs, 20% RF Characterization – Narrow Band Performance at 3. 50 GHz (1) Test conditions unless otherwise noted: T A = 25 ° C, V D = 32 V, I DQ = 220 mA Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 32 V, I DQ = 220 mA, CW at P 3dB 2. Input power established at P3dB under matched condition

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 4 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC ) DC at 85 ° C Case 3.2 ºC/W Channel Temperature (TCH ) 225 ° C Notes: Thermal resistance measured to bottom of package Median Lifetime Maximum Channel Temperature TBASE = 85° C, PD = 50 W

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 5 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits w hen placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedanc es presented to the device via an RF circuit or loa d-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: V DS = 32 V, I DQ = 220 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20% 3. Reference plane is at the device package leads

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 6 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. 32 34 36 38 40 42 44 46 48 18 32 34 36 38 40 42 44 46 48 0 32 34 36 38 40 42 44 46 48 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T1G4004532-FS Gain DrEff. and PAE vs. Pout

1000 MHz, 100 usec 20%, Vds = 32V, Idq = 220 mA

DrEff. PAE ZS = 1.44 + j0.47 Ω ZL = 4.03 + j4.08 Ω 32 34 36 38 40 42 44 46 48 12 32 34 36 38 40 42 44 46 48 0 32 34 36 38 40 42 44 46 48 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T1G4004532-FS Gain DrEff. and PAE vs. Pout

2000 MHz, 100 usec 20%, Vds = 32V, Idq = 220 mA

DrEff. PAE ZS = 3.08 - j2.88 Ω ZL = 8.34 + j2.68 Ω 32 34 36 38 40 42 44 46 48 16 32 34 36 38 40 42 44 46 48 0 32 34 36 38 40 42 44 46 48 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T1G4004532-FS Gain DrEff. and PAE vs. Pout

3000 MHz, 100 usec 20%, Vds = 32V, Idq = 220 mA

DrEff. PAE ZS = 9.62 - j8.19 Ω ZL = 5.19 - j0.02 Ω 32 34 36 38 40 42 44 46 48 14 32 34 36 38 40 42 44 46 48 0 32 34 36 38 40 42 44 46 48 0 Pout [dBm] Gain [dB] DrEff. & PAE [%] T1G4004532-FS Gain DrEff. and PAE vs. Pout

3500 MHz, 100 usec 20%, Vds = 32V, Idq = 220 mA

DrEff. PAE ZS = 3.12 - j2.70 Ω ZL = 7.67 + j0.47 Ω

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 7 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Performance Over Temperature (1, 2) Performance measured in TriQuint’s 2.7 GHz to 3.5 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: V DS = 32 V, I DQ = 220 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 8 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: V DS = 32 V, I DQ = 220 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 % Application Circuit Bias-down Procedure Turn off RF signal Turn off V D and wait 1 second to allow drain capacitor dissipation Turn off V G Bias-up Procedure Set gate voltage (V G) to -5.0V Set drain voltage (V D) to 32 V Slowly increase V G until quiescent I D is 220 mA. Apply RF signal

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 9 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Des. Value Qty Manufacturer Part Number C1, C2, C9 5.6 pF 3 ATC 600S5R6AW250T C3 10 uF 1 TDK C1632X5R0J106M C4 1.0 uF 1 Murata NFM18PS105R0J3 C5 100 pF 1 ATC 600S100AW250T C6 10 uF 1 Vishay Sprague 595D106X9035D2T C7 220 uF 1 AFK AFK227M2AR44B C8 0.7 pF 1 ATC 600S0R7AW250T L1 3.6 nH 1 Coilcraft 0603HC-3N6XJL L2 6.6 nH 1 Coilcraft GA3093-ALB R1 100 Ohms 1 Vishay Dale CRCW0603100RFKEC R2, R3 10 Ohms 2 Vishay Dale CRCW060310R0FKEA R4 0.01 Ohms 1 Panasonic ERJ-8BWJR010V

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 10 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Pin Layout Note: The T1G4004532-FS will be marked with the “4532” de signator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work we ek of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number. Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an

example.

2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an

example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Notes: Thermal resistance measured to bottom of package

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 11 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Mechanical Information All dimensions are in millimeters. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin- lead soldering processes.

Datasheet: RevA © 201 Product Compliance Information ESD Sensitivity Ratings ESD Rating: Value: Test: Standard: MSL Rating The part is rated Moisture Sensitivity Level 3 at 260° C per JEDEC ECCN US Department of Commerce Recommended Soldering Temperature Profile Datasheet: RevA © 201 4 TriQuint Product Compliance Information ESD Sensitivity Ratings Caution! ESD ESD Rating: Class 1B Value: Passes Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22 MSL Rating The part is rated Moisture Sensitivity Level 3 at 260° C per JEDEC standard IPC/JEDEC J ECCN US Department of Commerce Recommended Soldering Temperature Profile Product Compliance Information ESD Sensitivity Ratings Caution! ESD -Sensitive Device Class 1B Passes ≥ 500 V to < Human Body Model (HBM) JEDEC Standard JESD22 MSL Rating The part is rated Moisture Sensitivity Level 3 at 260° C per standard IPC/JEDEC J US Department of Commerce Recommended Soldering Temperature Profile Product Compliance Information ESD Sensitivity Ratings Sensitive Device 500 V to < 100 0 V max. Human Body Model (HBM) JEDEC Standard JESD22 -A114 The part is rated Moisture Sensitivity Level 3 at 260° C per standard IPC/JEDEC J -STD-020. US Department of Commerce EAR99 Recommended Soldering Temperature Profile 45W, 32V DC Product Compliance Information Sensitive Device 0 V max. A114 The part is rated Moisture Sensitivity Level 3 at 260° C per Recommended Soldering Temperature Profile , 32V DC – 3.5 GHz, GaN RF Power Transistor - 12 of 13 - Solderability Compatible with the latest versio free solder, 260° C RoHs Compliance This part directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: The part is rated Moisture Sensitivity Level 3 at 260° C per Recommended Soldering Temperature Profile

3.5 GHz, GaN RF Power Transistor

Compatible with the latest versio free solder, 260° C RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP- A (C
• PFOS Free
• SVHC Free Recommended Soldering Temperature Profile T1G4004532

Disclaimer: Subject to change without notice Solderability Compatible with the latest versio free solder, 260° C RoHs Compliance compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free A (C 15 H12 Br 402) Free PFOS Free SVHC Free T1G4004532 Disclaimer: Subject to change without notice www.triquint.com Compatible with the latest versio n of J- STD compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Halogen Free (Chlorine, Bromine) ) Free T1G4004532 -FS Disclaimer: Subject to change without notice www.triquint.com STD -020, Lead compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: RevA - 13 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Contact Information For the latest specifications, additional product informa tion, worldwide sales and distribution locations, and infor mation about TriQuint: Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliab le. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever f or any of the information contained herein. TriQuint assumes no responsibility or liability whats oever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS " and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change withou t notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products . The information contained herein or any use of such informat ion does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual propert y rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized fo r use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a failu re would reasonably be expected to cause severe pers onal injury or death.