SVF6N70F DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=700V,ID=7A,RDS(ON)<1.7Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TJ=25℃ 7 A Continuous Drain Current-TJ=100℃ 3.9 EAS Single Pulse Avalanche Energy(note1) 300 mJ IAR Avalanche Current (note2) 7 A PD Power Dissipation 40 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.2 ℃/W D S G SVF6N70F All d ata sheet.com
www.doingter.cn — 2 — RƟJA Thermal Resistance,Junction to Ambient 62.5 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 700 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=700V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=3A --- --- 1.7 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25v, VGS=0V, f=1MHz --- 980 --- pF Coss Output Capacitance --- 105 --- Crss Reverse Transfer Capacitance --- 13 --- Switching Characteristics td(on) Turn-On Delay Time VDD=350V,.ID=6A RG=25Ω. (Note3,4) --- 13 35 ns tr Rise Time --- 45 100 ns td(off) Turn-Off Delay Time --- 25 60 ns tf Fall Time --- 35 80 ns Qg Total Gate Charge VGS=10V, VDS=560V ID=6A. (Note3,4) --- 30 40 nC Qgs Gate-Source Charge --- 3.5 --- nC Qgd Gate-Drain “Miller” Charge --- 6.5 --- nC Drain-Source Diode Characteristics ℃/W SVF6N70F All d ata sheet.com
www.doingter.cn — 5 — Not es :※ 1. Z θ JC(t) = 1.56 /W Max.℃ 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC(t ) sing le pulse D= 0. 5 0. 02 0. 2 0. 05 0. 1 0. 01 Zθ JC(t), Thermal Response t1 , S quare W ave Pulse Duration [sec] SVF6N70F 0086-0755-8278-9056 All d ata sheet.com