SVF1N60D DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=600V,ID=1A,RDS(ON)≤11.5Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 1 A Continuous Drain Current-TC=100℃ 0.63 Pulsed Drain Current --- EAS Single Pulse Avalanche Energy1 50 mJ PD Power Dissipation(TC=25℃) 30 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 4.17 ℃/W RƟJA Thermal Resistance,Junction to Ambient 110 D S G SVF1N60D All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 600 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=600V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=0.5A --- --- 11.5 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 120 150 pF Coss Output Capacitance --- 25 60 Crss Reverse Transfer Capacitance --- 3 4 Switching Characteristics td(on) Turn-On Delay Time3,4 VDS=300V, ID=1A, RGEN=25Ω --- 5 20 ns tr Rise Time3,4 --- 25 60 ns td(off) Turn-Off Delay Time3,4 --- 7 25 ns tf Fall Time3,4 --- 25 60 ns Qg Total Gate Charge3,4 VGS=10V, VDS=480V, ID=2A --- 5 6 pF Qgs Gate-Source Charge 3,4 --- 1 --- nC Qgd Gate-Drain “Miller” Charge3,4 --- 2.6 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage IS=1A --- --- 1.4 V SVF1N60D All d ata sheet.com
www.doingter.cn — 3 — Notes: 1, L=55mH, IAS=1A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature Typical Characteristics： (TC=25℃ unless otherwise noted) SVF1N60D All d ata sheet.com
www.doingter.cn — 4 — SVF1N60D All d ata sheet.com
www.doingter.cn — 5 — SVF1N60D 0086-0755-8278-9056 All d ata sheet.com