STZ8024

STZ8024 HTSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Silicon Planar Zener Diodes For stabilization of power supply application Absolute Maximum Ratings (T a = 25 O Parameter Symbol Value Unit Power Dissipation P tot 300 mW Repetitive Peak Forward Current I FRM 200 mA Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Value Unit Thermal Resistance Junction to Ambient Air R thA 417 O C/W Forward Voltage a t I F = 10 mA V F 1 V Anode2 Top View Simplified outline SOD-323 and symbol PINNING PIN Cathode

DESCRIPTION

Date:2011/05 www.htsemi.comsemiconductor JinYu

Dynamic Impedance Reverse Leakage Current Temp. coefficient of Zener Voltage l ZT f o r V Z Z Z T Z ZK a t I ZK I R at V R S Z (mV/ O Typ. at I ZT mA V Ω (Max.) Ω (Max.) mA μA (Max.) V STZ8024 1C 5 2.28…2.6 100 - - 120 1 -1.6 STZ8027 1D 2.5…2.9 110 - - 120 1 -2 STZ8027A 1C1 2.5…2.75 STZ8027B 7D 2.65…2.9 STZ8030 1E 2.8…3.2 120 - - 50 1 -2.1 STZ8030A 1F1 2.8…3.05 STZ8030B 7E 2.95…3.2 STZ8033 1F 3.1…3.5 130 - - 20 1 -2.4 STZ8033A 1J1 3.1…3.35 STZ8033B 7F 3.25…3.5 STZ8036 1H 3.4…3.8 130 - - 10 1 -2.4 STZ8036A 1M1 3.4…3.65 STZ8036B 7H 3.55…3.8 STZ8039 1J 3.7…4.1 130 - - 10 1 -2.5 STZ8039A 1Q1 3.7…3.97 STZ8039B 7J 3.87…4.1 STZ8043 1K 4…4.6 130 - - 10 1 -2.5 STZ8043A 1T1 4.03…4.26 STZ8043B 7K 4.17…4.4 STZ8043C 1W1 4.31…4.54 STZ8047 1M 4.4…5 80 800 1 2 1 -1.4 STZ8047A 1Y1 4.45…4.69 STZ8047B EB 4.59…4.83 STZ8047C 2A1 4.74…4.99 STZ8051 1N 4.8…5.4 60 500 1 2 1.5 -0.8 STZ8051A 2C1 4.87…5.12 STZ8051B EC 5…5.26 STZ8051C 2E1 5.14…5.4 STZ8056 1P 5.3…6 40 200 0.5 1 2.5 1.2 STZ8056A 2G1 5.3…5.58 STZ8056B ED 5.48…5.76 STZ8056C 2J1 5.66…5.95 STZ8062 1R 5.8…6.6 30 100 0.5 1 3 2.3 STZ8062A 2L1 5.85…6.15 STZ8062B 7R 6.05…6.36 STZ8062C 2N1 6.24…6.56 STZ8068 1X 6.4…7.2 20 60 0.5 0.5 3.5 3 STZ8068A 2Q1 6.44…6.77 STZ8068B 7X 6.64…6.98 STZ8068C 2S1 6.85…7.2 STZ8075 1Y 7…7.9 20 60 0.5 0.5 4 4 STZ8075A 2U1 7.07…7.43 STZ8075B 7Y 7.29…7.67 STZ8075C 2X1 7.51…7.89 STZ8000 Series Date:2011/05 www.htsemi.comsemiconductor JinYu

Dynamic Impedance Reverse Leakage Current Temp. coefficient of Zener Voltage l ZT f o r V Z Z Z T Z ZK a t I ZK I R at V R S Z (mV/ O Typ. at I ZT mA V Ω (Max.) Ω (Max.) mA μA (Max.) V STZ8082 1Z 7.7…8.7 20 60 0.5 0.5 5 4.6 STZ8082A 2Z1 7.77…8.17 STZ8082B EJ 8.03…8.43 STZ8082C 3B1 8.29…8.7 STZ8091 2A 8.5…9.6 20 60 0.5 0.5 6 5.5 STZ8091A 3D1 8.58…9.02 STZ8091B EK 8.87…9.33 STZ8091C 3F1 9.14…9.6 STZ8100 2B 9.4…10.6 30 60 0.5 0.1 7 6.4 STZ8100A 3H1 9.44…9.92 STZ8100B 8B 9.75…10.25 STZ8100C 3K1 10.07…10.59 STZ8110 2C 10.4…11.6 30 60 0.5 0.1 8 7.4 STZ8110A 3M1 10.4…10.94 STZ8110B EN 10.73…11.28 STZ8110C 3P1 11.05…11.6 STZ8120 2D 11.4…12.7 30 80 0.5 0.1 9 8.4 STZ8120A 3R1 11.4…11.96 STZ8120B 8D 11.73…12.33 STZ8120C 3T1 12.06…12.68 STZ8130 2E 12.4…14.1 35 80 0.5 0.1 10 9.4 STZ8130A 3W1 12.4…12.99 STZ8130B ER 12.73…13.4 STZ8130C 3Y1 13.25…14.08 STZ8140 3Z1 5 13.65…14.35 40 80 0.5 0.1 10 10 STZ8150 2F 13.9…15.6 40 80 0.5 0.1 11 11.4 STZ8150A 4B1 13.9…14.76 STZ8150B EX 14.6…15.35 STZ8150C 4D1 14.95…15.6 STZ8160 2H 15.3…17.1 50 80 0.5 0.1 12 12.4 STZ8160A 4F1 15.3…16.09 STZ8160B 8H 15.7…16.5 STZ8160C 4H1 16.26…17.1 STZ8180 2J 16.9…19.1 60 80 0.5 0.1 13 14.4 STZ8180A 4K1 16.9…17.76 STZ8180B 8J 17.55…18.45 STZ8180C 4M1 18.2…19.1 STZ8200 2K 18.8…21.2 80 100 0.5 0.1 15 16.4 STZ8200A 4P1 18.85…19.81 STZ8200B 8K 19.5…20.5 STZ8200C 4R1 20.15…21.19 STZ8220 2M 20.8…23.3 80 100 0.5 0.1 17 18.4 STZ8220A 4T1 20.8…21.86 STZ8220B 8M 21.45…22.55 STZ8220C 4W1 22.1…23.24 STZ8000 Series Date:2011/05 www.htsemi.comsemiconductor JinYu

Dynamic Impedance Reverse Leakage Current Temp. coefficient of Zener Voltage l ZT f o r V Z Z Z T Z ZK a t I ZK I R at V R S Z (mV/ O Typ. at I ZT mA V Ω (Max.) Ω (Max.) mA μA (Max.) V STZ8240 2N 22.8…25.6 100 120 0.5 0.1 19 20.4 STZ8240A 4Y1 22.8…23.97 STZ8240B FC 23.5…24.7 STZ8240C 5A1 24.35…25.6 STZ8270 2P 25.1…28.9 120 120 0.5 0.1 21 23.4 STZ8270A 5C1 25.3…26.7 STZ8270B FD 26.3…27.7 STZ8270C 5E1 27.3…28.7 STZ8300 2R 28…32 160 160 0.5 0.1 23 26.6 STZ8300A 5G1 28.3…29.7 STZ8300B FE 29.3…30.8 STZ8300C 5J1 30.2…31.8 STZ8330 2X 31…35 200 200 0.5 0.1 25 29.7 STZ8330A 5L1 31.2…32.8 STZ8330B 8X 32.2…33.8 STZ8330C 5N1 33.2…34.9 STZ8360 2Y 34…38 250 250 0.5 0.1 27 33 STZ8360A 5Q1 34.1…35.9 STZ8360B 8Y 35.1…36.9 STZ8360C 5S1 36.1…37.9 STZ8390 2Z 37…41 300 300 0.5 2 30 35.6 STZ8390A 5U1 37.1…39 STZ8390B FJ 38…40 STZ8390C 5X1 39…41 V Z is tested with pulses (20 ms). Ambient Temperature: Ta ( C) O 0 25 100 150 100 200 300 Power Dissipation: Ptot (mW) Derating Curve STZ8000 Series Date:2011/05 www.htsemi.comsemiconductor JinYu

Plastic surface mounted package; 2 leads SOD-323 A mm UNIT b DCE H E b A D A c H E p 1.10 0.80 0.40 0.25 0.15 0.10 1.80 1.60 1.35 1.15 2.80 2.30 Ep STZ8000 Series Date:2011/05 www.htsemi.comsemiconductor JinYu