STU30N15 DOINGTER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=150V,ID=20A,RDS(ON)<55mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 20 A Continuous Drain Current-TC=100℃ 12 Pulsed Drain Current 76 IS 20 A PD Power Dissipation 50 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 50 ℃/W RƟJA Thermal Resistance,Junction to Ambient 2.5 D S G Continuous-Source Current STU30N15 All d ata sheet.com

A, V www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 150 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=120V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) a Drain-Source On Resistance VGS=10V,ID=10A --- 49 55 mΩ VGS=6V,ID=4A --- 53 65 Dynamic Characteristicsb Ciss Input Capacitance VDS=75V, VGS=0V, f=1MHz --- 1041 --- pF Coss Output Capacitance --- 67 --- Crss Reverse Transfer Capacitance --- 31 --- Switching Characteristicsb td(on) Turn-On Delay Time VDs=75V, ID=10A, VGS=10V,RGEN=4.5Ω RL=7.5Ω --- 9 -- ns tr Rise Time --- 34 --- ns td(off) Turn-Off Delay Time --- 13.6 --- ns tf Fall Time --- 36.8 --- ns Qg Total Gate Charge VGS=10V, VDS=75V, ID=10A --- 16.4 --- nC Qgs Gate-Source Charge --- 6.2 --- nC Qgd Gate-Drain “Miller” Charge --- 2.7 --- nC Drain-Source Diode Characteristics VSD a Source-Drain Diode Forward Voltage2 VGS=0V,IS=10A --- --- 1.3 V trr Reverse Recovery Time --- 79 --- Ns IDS = 4 GS = 0 V STU30N15 All d ata sheet.com

www.doingter.cn — 3 — qrr Reverse Recovery Charge 176 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) dlSD/dt = 100 A/μs * Pulse width  300 s, duty cycle  2 % Mounted on Large Heat Sink * limited by bonding wire a : Pulse test ; pulse width  300 s, duty cycle  2% b : Guaranteed by design, not subject to production testing Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tmp – Mounting Point Temp. (° C) Tmp – Mounting Point Temp. (° C) Safe Operating Area Transient Thermal Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 TC=25 o C,VG=10V 0.01 0.1 1 10 100 800 0.1 100 200 300us 1ms Rds(on) Limit TC=25 o C 10ms 100ms DC 0 20 40 60 80 100 120 140 160 180 TC=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 0.02 Mounted on 1in pad RJC :2.5 o C/W 0.01 0.05 0.1 0.2 Single Pulse Duty = 0.5 STU30N15 All d ata sheet.com

www.doingter.cn — 4 — Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (° C) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250A 1 2 3 4 5 6 7 8 9 10 100 150 200 250 300 IDS=10A 0 5 10 15 20 25 30 35 40 100 VGS= 6V VGS=10V VGS= 6,7,8,9,10V STU30N15 All d ata sheet.com

www.doingter.cn — — Normalized On Resistance Diode Forward Current Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (° C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 20 40 60 80 100 120 250 500 750 1000 1250 1500 Frequency=1MHz Crss Coss Ciss 0 3 6 9 12 15 18 VDS= 75V ID = 10A -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 RON@Tj=25 o C: 53m VGS = 10V IDS = 10A Tj=25 o C Tj=150 o C STU30N15 0086-0755-8278-9056 All d ata sheet.com