STU03L07 DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=70V,ID=56A,RDS(ON)<8.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current-TC=25℃ A Continuous Drain Current-TC=100℃ IDm Pulsed Drain Current1 224 dv/dt 9.8 V/NS EAS Single Pulse Avalanche Energy 350 mJ PD Power Dissipation,TC=25℃ W 0.43 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 Thermal Characteristics： Symbol Parameter Max Units D S G Peak Diode Recovery Voltage Derating Factor RƟJC Thermal Resistance,Junction to Case1 234 ℃/W STU03L07 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=70V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA --- V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=40A --- 7.5 8.5 mΩ GFS Forward Transconductance VDS=10V, ID=15A --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 2860 --- pF Coss Output Capacitance --- 281 --- Crss Reverse Transfer Capacitance --- 265 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=2A, VGS=10V,RGEN=15Ω --- --- ns tr Rise Time --- --- ns td(off) Turn-Off Delay Time --- --- ns tf Fall Time --- --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=40A --- --- nC Qgs Gate-Source Charge --- 15.7 --- nC Qgd Gate-Drain “Miller” Charge --- 35.2 --- nC Drain-Source Diode Characteristics STU03L07 All d ata sheet.com
www.doingter.cn — 3 — VSD Source-Drain Diode Forward Voltage1 --- 0.89 0.99 V LsDM 224 A ISD 56 A trr Reverse Recovery Time1 26 --- Ns qrr Reverse Recovery Charge1 33 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) Pulsed Source- Source-Drain Current(Body Diode) TJ=25℃,ISD=40A,VGS TJ=25℃,IF=75A di/dt=100A/μs 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃ Test Circuit 1）EAS Test Circuits 2）Gate Charge Test Circuit: STU03L07 All d ata sheet.com
www.doingter.cn — 4 — 3）Switch Time Test Circuit： Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) Figure3. BVDSS vs Junction Temperature Figure4. ID vs Junction Temperature T emperature（℃） T emperature（℃） ID-Drain Current (A) ID-Drain Current (A) ID-Drain Current(A) Normalized BVDSS STU03L07 All d ata sheet.com
Figure5. VGS(th) vs Junction Temperature Figure6. Rdson Vs Junction Temperature T emperature（℃） C Capacitance (pF) Qg Gate Charge (nC) VGS (Volts) VDS Drain-Source Voltage (V) ID-Drain Current(A) Figure9. Source- Drain Diode Forward Figure10. Safe Operation Area Figure7. Gate Charge Figure8. Capacitance vs Vds VDS Drain-Source Voltage (V) VSD Source-Drain Voltage (V) IS - Source Drain Current (A) www.doingter.cn — —5 STU03L07 All d ata sheet.com
www.doingter.cn — — Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) R(t), Normalized Effective Transient Thermal Impedance STU03L07 0086-0755-8278-9056 All d ata sheet.com