STP80NF12 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=120V,ID=110A,RDS(ON)<6.5 Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TJ=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current1 TC=25℃ 110 A EAS Single Pulse Avalanche Energy5 400 mJ PD Power Dissipation 192 W TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.65 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 62 D S G m STP80NF12 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TJ=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 120 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=120V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA --- V RDS(ON) Drain-Source On Resistance VGS=10V,ID=30A --- 5.0 6.5 Ω Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=100 KHz --- 5000 --- pF Coss Output Capacitance --- 650 --- Crss Reverse Transfer Capacitance --- --- Switching Characteristics td(on) Turn-On Delay Time VGS=10V ,VDS=50V, ID=25A, RG=2Ω. --- --- ns tr Rise Time --- --- ns td(off) Turn-Off Delay Time --- 54.5 --- ns tf Fall Time --- --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=25A --- --- nC Qgs Gate-Source Charge --- --- nC Qgd Gate-Drain “Miller” Charge --- 13.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=30A --- --- 1.3 V Is Diode Forward Current VGS<Vth --- --- 110 A ISP --- --- 330 Pulsed source current m STP80NF12 All d ata sheet.com