STP6N65M2 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=7A,RDS(ON)<1.25Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- 7 A Continuous Drain Current-TC=100℃ 4.7 EAS Single Pulse Avalanche Energy1 420 mJ IAR 7 PD Power Dissipation 147 W TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.88 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5 D S G Avalanche Current A STP6N65M2 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=3.5 A --- 1.25 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- pF Coss Output Capacitance --- Crss Reverse Transfer Capacitance --- Switching Characteristics td(on) Turn-On Delay Time VDD=300V, ID=7A, RGEN=2.5Ω.3-4 --- 30 70 ns tr Rise Time --- 80 170 ns td(off) Turn-Off Delay Time --- 65 140 ns tf Fall Time --- 60 ns Qg Total Gate Charge VGS=10V, VDS=480V, ID=7A3-4 --- 29 38 nC Qgs Gate-Source Charge --- 7 --- nC Qgd Gate-Drain “Miller” Charge --- 14.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=7 A --- --- 1.5 V Is Diode Forward Current --- --- --- 7 A ISM 28 --- --- Max. Pulsed Forward Cur rent --- --- --- --- 1100 1430 135 175 16 21 140 STP6N65M2 All d ata sheet.com
www.doingter.cn — 3 — Trr Reverse Recovery Time --- 320 --- NS Qrr Reverse Recovery Charge --- 2.4 --- IS= A,VGS =0V diF/d t=100A/μs Typical Characteristics μC Notes : 1, L=6mH, IAS=7A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature STP6N65M2 All d ata sheet.com
www.doingter.cn — 4 — STP6N65M2 0086-0755-8278-9056 All d ata sheet.com