STP656F DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=50A,RDS(ON)≤0.018Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current-TC=25℃ 50 A Continuous Drain Current-TC=100℃ 35.4 Pulsed Drain Current --- EAS Single Pulse Avalanche Energy1 490 mJ PD Power Dissipation 120 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.24 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5 D SG STP656F All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=25A --- --- 0.018 Ω GFS Forward Transconductance --- --- --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1180 1540 pF Coss Output Capacitance --- 440 580 Crss Reverse Transfer Capacitance --- 65 90 Switching Characteristics td(on) Turn-On Delay Time3,4 VDD=250V, ID=25A, RGEN=25Ω --- 15 40 ns tr Rise Time3,4 --- 105 220 ns td(off) Turn-Off Delay Time3,4 --- 60 130 ns tf Fall Time3,4 --- 65 140 ns Qg Total Gate Charge3,4 VGS=10V, VDS=400V, ID=25A --- 31 41 nC Qgs Gate-Source Charge 3,4 --- 8 --- nC Qgd Gate-Drain “Miller” Charge3,4 --- 13 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,ID=25A --- --- 1.5 V STP656F All d ata sheet.com
www.doingter.cn — 3 — Notes: 1, L=9.3mH, IAS=50A, VDD=50V, RG=25Ω, Starting TJ =25° C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) STP656F All d ata sheet.com
www.doingter.cn — 4 — STP656F All d ata sheet.com
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