STP60NF06L DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=45A,RDS(ON)<15mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current-TC=25℃ 45 A Continuous Drain Current-TC=100℃ 32 Pulsed Drain Current1 180 EAS Single Pulse Avalanche Energy2 182 mJ PD Power Dissipation(TC=25℃) 68 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.2 ℃/W D S G STP60NF06L All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V,VDS=60V,(TC=25℃) --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=40A --- 11.5 15 mΩ GFS Forward Transconductance VDS =10V, ID=15A 18 --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1717 --- pF Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 140 --- Switching Characteristics td(on) Turn-On Delay Time VDS=30V,RL=2.5Ω VGS=10V,RG=3Ω --- 15 --- ns tr Rise Time --- 25 --- ns td(off) Turn-Off Delay Time --- 50 --- ns tf Fall Time --- 23 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=15A --- 50 --- nC Qgs Gate-Source Charge --- 12 --- nC Qgd Gate-Drain “Miller” Charge --- 23 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage1 TJ=25℃,ISD=1A,VGS=0V --- 0.85 0.99 V STP60NF06L All d ata sheet.com
www.doingter.cn — 3 — Notes: 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃. Typical Characteristics： (TC=25℃ unless otherwise noted) STP60NF06L All d ata sheet.com
www.doingter.cn — 4 — STP60NF06L All d ata sheet.com
www.doingter.cn — 5 — STP60NF06L 0086-0755-8278-9056 All d ata sheet.com