STP4953 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： Features： 1) VDS=-30V,ID=-6A,RDS(ON)<75mΩ@VGS=-4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current -6 A Pulsed Drain Current1 -30 PD Power Dissipation 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient2 62.5 ℃/W This Dual P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. D2S1 STP4953 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-24 --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -0.7 -1 -1.3 V RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-4.2A 47 55 mΩ VGS=-4.5V,ID=-4A --- 56 75 VGS=-2.5V,ID=-1A --- 72 130 GFS Forward Transconductance1 VDS=-5V, ID=-4.2A --- 10 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 880 --- pF Coss Output Capacitance --- 105 --- Crss Reverse Transfer Capacitance --- 65 --- Switching Characteristics td(on) Turn-On Delay Time VDD=-15V, RL=6Ω VGS=-10V, ID=-4.2A --- 7 --- ns tr Rise Time --- 3 --- ns td(off) Turn-Off Delay Time --- 30 --- ns tf Fall Time --- 12 --- ns Qg Total Gate Charge VGS=-4.5V, VDS=-15V, ID=-4.2A --- 8.5 --- nC Qgs Gate-Source Charge --- 1.8 --- nC Qgd 2.7 --- Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-4.2A --- --- -1.2 V Gate-Drain Charge Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production --- STP4953 All d ata sheet.com