STP4925 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-7A,RDS(ON)<20mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -7 A Continuous Drain Current-TC=100℃ -5.1 Pulsed Drain Current1 -32 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation(TC=25℃) 2.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 60 G D D D DS1 S S Dual STP4925 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1.0 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-8A --- 16.5 20 mΩ VGS=-4.5V,ID=-5A --- 25.6 32 GFS Forward Transconductance VDS=-10V, ID=-3A --- 6.8 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 1250 1820 pF Coss Output Capacitance --- 160 235 Crss Reverse Transfer Capacitance --- 90 130 Switching Characteristics td(on) Turn-On Delay Time2,3 VDD=-15V , VGS=-10V , RG=6,ID=-1A --- 5.8 11 ns tr Rise Time2,3 --- 18.8 36 ns td(off) Turn-Off Delay Time2,3 --- 46.9 89 ns tf Fall Time2,3 --- 12.3 23 ns Qg Total Gate Charge2,3 VDS=-15V , VGS=-4.5V , ID=-5A --- 11 17 nC Qgs Gate-Source Charge 2,3 --- 3.4 6 nC Qgd Gate-Drain “Miller” Charge2,3 --- 4.2 8 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=-1A --- --- -1 V STP4925 All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform STP4925 All d ata sheet.com
www.doingter.cn — 4 — Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform STP4925 0086-0755-8278-9056 All d ata sheet.com