STP4407A DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-12A,RDS(ON)<16mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -12 A Continuous Drain Current-TC=100℃ --- Pulsed Drain Current1 -48 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation 3 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient2 41.67 G D D D DS1 S S ℃/W Thermal Characteristics： STP4407A All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -30 -33 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-30V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1 -1.5 -3 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-10A --- 11.5 15 mΩ VGS=-4.5V,ID=-7A --- 18 25 GFS Forward Transconductance VDS= -10V, ID=-10A 20 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 1750 --- pF Coss Output Capacitance --- 215 --- Crss Reverse Transfer Capacitance --- 180 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=-15V, ID=-10A, VGS=-10V,RGEN=1Ω --- 9 --- ns tr Rise Time --- 8 --- ns td(off) Turn-Off Delay Time --- 28 --- ns tf Fall Time --- 10 --- ns Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-10A --- 24 --- nC Qgs Gate-Source Charge --- 3.5 --- nC Qgd Gate-Drain “Miller” Charge --- 6 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-2A --- --- -1.2 V STP4407A All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Typical Characteristics： (TC=25℃ unless otherwise noted) STP4407A All d ata sheet.com
www.doingter.cn — 4 — STP4407A All d ata sheet.com
www.doingter.cn — 5 — STP4407A 0086-0755-8278-9056 All d ata sheet.com