STP240N10F7 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： VDS=100V,ID=170A,RDS(ON)<3mΩ@VGS=10V Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON). Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current1 170 A Pulsed Drain Current2 510 EAS Single Pulse Avalanche Energy4 540 mJ PD Power Dissipation3 340 W TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.37 ℃/W RƟJA Thermal Resistance,Junction to Ambient5 62 D S G STP240N10F7 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA V RDS(ON) Drain-Source On Resistance VGS=10V,ID=30A --- 2.8 mΩ Dynamic Characteristics Ciss Input Capacitance4 VDS=50V, VGS=0V, f=1MHz --- 9644.2 --- pF Coss Output Capacitance4 --- 1300.4 --- Crss Reverse Transfer Capacitance4 --- 24.6 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=20A, RGEN=2Ω.VGS=10V --- 43.7 ns tr Rise Time --- 19.7 ns td(off) Turn-Off Delay Time --- 102.3 ns tf Fall Time --- 22.5 ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=20A --- 114.5 nC Qgs Gate-Source Charge --- 34.8 --- nC Qgd Gate-Drain “Miller” Charge --- 23.2 --- nC 4.6 V Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V Is Diode Forward Current --- --- 170 A 510 A Vplateau Gate plateau voltage ISP Pulsed source current VGS<Vth STP240N10F7 All d ata sheet.com
www.doingter.cn — 4 — 0.01 0.1 1 10 100 0.01 0.1 100 1000 10 ms VDS, Drain-source voltage(V) ID, Drain current(A) 10 μs DC 1 ms 100 μs RDS(ON) Limited Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance Figure 9, Drain current Figure 10, Safe operation area TC=25 ℃ 0.6 0.9 1.2 1.5 100 Tj = 25 ℃ IS, Source current (A) VSD, Source-Drain voltage (V) 50 100 150 200 250 300 0.0 10.0m 20.0m 30.0m 40.0m
5.5 V 6 V
VGS=5 V ID, Drain current(A) RDS(ON), On-resistance(Ω) 0 20 40 60 80 100 120 140 120 150 180ID, Drain current (A) TC, Case Temperature (℃) , , Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance -50 0 50 100 150 100 105 110 115 120BVDSS, Drain-source breakdown voltage (V) Tj, Junction temperature (℃) ID = 250 μA VGS = 0 V -50 0 50 100 150 1.0m 2.0m 3.0m 4.0m 5.0m 6.0m ID = 30 A VGS = 10 V Tj, Junction Temperature (℃) RDS(ON), On-resistance(Ω)
5.5 V 6 VVGS=5 V
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www.doingter.cn — 5 — STP240N10F7 0086-0755-8278-9056 All d ata sheet.com