STP110N10F7 DOINGTER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=120A,RDS(ON)<6mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID * Continuous Drain Current TC=25℃ 120 A Continuous Drain Current-TC=100℃ 80 IDM Pulsed Drain Current 350 IS 80 PD Power Dissipation 150 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.85 ℃/W Continuous-Source Current D SG STP110N10F7 All d ata sheet.com

www.doingter.cn — 2 — RƟJA ** Thermal Resistance,Junction to Ambient 62.5 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±30 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 3 V RDS(ON) a Drain-Source On Resistance VGS=10V,ID=20A --- 5 6 mΩ VGS=4.5V,ID=10A --- 7 8 Dynamic Characteristics b Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 3390 --- pF Coss Output Capacitance --- 1940 --- Crss Reverse Transfer Capacitance --- 210 --- Switching Characteristics b td(on) Turn-On Delay Time VDS=80V, ID=20A, RGEN=3.3Ω --- 14 --- ns tr Rise Time --- 58 --- ns td(off) Turn-Off Delay Time --- 38 --- ns tf Fall Time --- 64 --- ns Qg Total Gate Charge VGS=10V, VDS=80V, ID=20A --- 59 --- nC Qgs Gate-Source Charge --- 11 --- nC Qgd Gate-Drain “Miller” Charge --- 15 --- nC Drain-Source Diode Characteristics ℃/W STP110N10F7 All d ata sheet.com

www.doingter.cn — 3 — VSD a Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.2 V Trr --- 61 --- Qrr --- 105 --- Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) nS μC IDS = 20 A, VGS = 0 V dlSD/dt = 100 A/μs Reverse Recovery Time Reverse Recovery Charge * Pulse width  300 s, duty cycle  2 % Mounted on Large Heat Sink * limited by bonding wire a : Pulse test ; pulse width  300 s, duty cycle  2% b : Guaranteed by design, not subject to production testing Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Transient Thermal Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 25 50 75 100 125 150 175 TC=25 o C,VGS=10V 0 25 50 75 100 125 150 175 TC=25 o C,VGS=10V 0.01 0.1 1 10 100 500 0.01 0.1 100 600 100us 1ms Rds(on)Limit TC=25 o C 10ms 100ms DC 300us 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 0.02 Mounted on 1in pad RθJC :3.5 o C/W 0.01 0.05 0.1 0.2 Single Pulse Duty = 0.5 STP110N10F7 All d ata sheet.com

Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) 0 1 02 03 04 05 0 VGS= 4.5V VGS=10V 0123456789 1 0 IDS=20A -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS =250μA www.doingter.cn — —4 STP110N10F7 All d ata sheet.com

www.doingter.cn — —5 Normalized On Resistance Diode Forward Current Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 RON@Tj=25 o C: 4.5 mΩ VGS = 10V IDS = 20A 0.1 Tj=25 o C Tj=150 o C 0 5 10 15 20 25 30 1000 2000 3000 4000 5000 6000 Frequency=1MHz Crss Coss Ciss 02 0 4 0 6 0 VDS= 80V IDS= 20A STP110N10F7 0086-0755-8278-9056 All d ata sheet.com