STM201N DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=3A,RDS(ON)<135mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 3 A Drain Current – Continuous (TC=100℃ ) 2.2 IDM Drain Current – Pulsed1 12 PD Power Dissipation (TC=25℃ ) 2.5 W Power Dissipation – Derate above 25℃ --- TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 50 G D D D DS1 S S STM 201N All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V --- --- 25 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.7 3 V △VGS(th) VGS(th) Temperature Coefficient --- --- --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=3A --- 112 135 mΩ VGS=4.5V,ID=2A --- 120 145 GFS Forward Transconductance VDS=5V, ID=3A --- 11 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 610 980 pF Coss Output Capacitance --- 40 --- Crss Reverse Transfer Capacitance --- 25 --- Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=50V, ID=1A, RGEN=3.3Ω, VGS=10V --- 7 --- ns tr Rise Time2,3 --- 5 --- ns td(off) Turn-Off Delay Time2,3 --- 16 --- ns tf Fall Time2,3 --- 6 --- ns Qg Total Gate Charge2,3 VGS=10V, VDS=80V, ID=3A --- 12 20 nC Qgs Gate-Source Charge 2,3 --- 2.2 --- nC Qgd Gate-Drain “Miller” Charge2,3 --- 2.5 --- nC Drain-Source Diode Characteristics STM 201N All d ata sheet.com

www.doingter.cn — 3 — VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=2A,TJ=25℃ --- --- 1.2 V Trr Reverse Recovery TimeI --- 22 --- A Qrr Reverse Recovery Charge --- --- --- A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) dI/dt=100A/µs S=3A, VGS=0V 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 8.0V 6.0V 5.0V 4.0V V G = 3.0V 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 8.0V 6.0V 5.0V 4.0V V G = 3.0V T A = 150o C 110 114 118 122 126 130 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V STM 201N All d ata sheet.com

www.doingter.cn — 4 — Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W 0.001 0.01 0.1 100 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0369 1 2 1 5 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =80V 200 400 600 800 1000 0 20 40 60 80 100 120 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.5 1.5 2.5 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1mA STM 201N All d ata sheet.com

www.doingter.cn — 5 — Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) Fig 13. Normalized BV DSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0.8 1.6 2.4 3.2 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 100 120 140 160 180 200 0369 1 2 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V STM 201N All d ata sheet.com

www.doingter.cn — 6 — STM 201N 0086-0755-8278-9056 All d ata sheet.com