STD7N65M2 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=5A,RDS(ON)<0.9Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 5 A Continuous Drain Current-TC=100℃ 3 IDM Pulsed Drain Current1 15 dv/dt 48 V/ns EAS Single Pulse Avalanche Energy2 135 mJ IAR 2.5 mj PD Maximum PoPower Dissipation,TC=25℃ 49 W Derateabove 25℃ 0.39 W℃ EAR 0.4 MJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： D S G Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj = 125 °C Avalanche current(Note 1) Repetitive Avalanche energy ，tAR limited by T jmax (Note 1) STD7N65M 2 All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 2.55 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 75 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2.5 3 3.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2.5A --- 780 900 mΩ GFS Forward Transconductance VDS=20V, ID=3A --- 4.8 S Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 460 pF Coss Output Capacitance --- 45 Crss Reverse Transfer Capacitance --- 3.5 Switching Characteristics td(on) Turn-On Delay Time VDD=380V, ID=3A, VGS=10V,RGEN=18Ω --- 6 ns tr Rise Time --- 3 ns td(off) Turn-Off Delay Time --- 50 60 ns tf Fall Time --- 9 15 ns Qg Total Gate Charge VGS=10V, VDS=480V, --- 10 20 nC STD7N65M 2 All d ata sheet.com
www.doingter.cn — 3 — Qgs Gate-Source Charge ID=5A --- 1.6 nC Qgd Gate-Drain “Miller” Charge --- 4 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- --- V ISDM Continuous Source Current --- A ISD Pulsed Source Current --- A trr Reverse Recovery Time --- Ns qrr Reverse Recovery Charge --- nc IMM A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) ---RG f = 1 MHz open drain Intrinsic gate resistance 2.5 Ω 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2 .Tj=25℃,VDD=50V,VG=10V, RG=25Ω Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics STD7N65M 2 All d ata sheet.com
www.doingter.cn — 4 — Figure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction Temperature Figure7. BVDSS vs Junction Temperature Figure8. Maximum I D vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance STD7N65M 2 All d ata sheet.com
www.doingter.cn — — Figure11. Transient Thermal Impedance Test circuit 1）Gate charge test circuit & Waveform 2）Switch Time Test Circuit： 3）Unclamped Inductive Switching Test Circuit & Waveforms STD7N65M 2 All d ata sheet.com
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