STD60NF06 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=60A,RDS(ON)<12mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current-TC=25℃ 60 A Continuous Drain Current-TC=100℃ 31 Pulsed Drain Current1 180 EAS Single Pulse Avalanche Energy2 196 mJ PD Power Dissipation,TC=25℃ 68 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 2.2 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 --- D S G STD60NF06 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 3 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=40A --- 10.5 12 mΩ VGS=4.5V,ID=0A --- --- --- GFS Forward Transconductance VDS=10V, ID=40A 18 --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1659 --- pF Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 128 --- Switching Characteristics td(on) Turn-On Delay Time3 VDD=30V, ID=0A, VGS=10V,RGEN=3Ω --- 15 --- ns tr Rise Time2,3 --- 25 --- ns td(off) Turn-Off Delay Time --- 53 --- ns tf Fall Time2,3 --- 23 --- ns Qg Total Gate Charge3 VGS=10V, VDS=30V, ID=15A --- 50 --- nC Qgs Gate-Source Charge --- 12 --- nC Qgd Gate-Drain “Miller” Charge --- 23 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A --- 0.89 0.99 V STD60NF06 All d ata sheet.com
www.doingter.cn — 3 — Ls Continuous Source Current --- 45 --- A lsm Pulsed Source Current 180 --- A trr Reverse Recovery Time3 24 --- Ns qrr Reverse Recovery Charge3 30 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) TJ=25℃,IF=15A di/dt=100A/μs 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=30V,VG=10V, RG=25Ω 3 Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃ Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) Figure3. BVDSS vs Junction Temperature Figure4. ID vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) ID-Drain Current (A) ID-Drain Current (A) Normalized BVDSS ID-Drain Current(A) STD60NF06 All d ata sheet.com
www.doingter.cn — 4 — Figure5. VGS(th) vs Junction Temperature Figure6. Rdson Vs Junction Temperature T emperature （℃） VGS (Volts) VDS Drain-Source Voltage (V) Figure7. Gate Charge Figure8. Capacitance vs Vds C Capacitance (pF) Qg Gate Charge (nC) Figure9. Source- Drain Diode Forward Figure10. Safe Operation Area 10us 1ms 10ms DC VDS Drain-Source Voltage (V) ID-Drain Current(A) IS - Source Drain Current (A) VSD Source-Drain Voltage (V) STD60NF06 All d ata sheet.com
www.doingter.cn Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) Transient Thermal Impedance R(t), Normalized Effective STD60NF06 — 5 — 0086-0755-8278-9056 All d ata sheet.com