SSPR60N03 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=60A,RDS(ON)<6.5 mΩ@VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-Continuous (TC=25℃) A Continuous Drain Current-TC=100℃ IDM Drain Current – Pulsed1 240 A EAS Single Pulse Avalanche Energy2 mJ PD Power Dissipation (TC=25℃) W Power Dissipation – Derate above 25℃ 0.36 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 S S G DDDD Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 62 ℃/W RƟJA Thermal Resistance,Junction to Ambient 2.8 SSPR60N03 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Drain-Source Leakage Current VGS=0V, VDS=30V, TJ=25℃ --- --- μA VGS=0V, VDS=24V, TJ=125℃ μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=20A --- 5.1 6.5 mΩ VGS=4.5V,ID=10A --- GFS Forward Transconductance VDS=10V, ID=10A --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1210 1800 pF Coss Output Capacitance --- 190 280 Crss Reverse Transfer Capacitance --- 100 150 Switching Characteristics td(on) Turn-On Delay Time3.4 VDD=15V , VGS=10V , RG= =3.3,ID=15A --- 7.5 ns tr Rise Time3.4 --- 14.5 ns td(off) Turn-Off Delay Time3.4 --- 32.5 ns tf Fall Time3.4 --- 9.6 18 ns Qg Total Gate Charge3.4 VDS=15V , VGS=4.5V , ID=20A --- 11.1 18 nC Qgs Gate-Source Charge3.4 --- 1.85 3.8 nC Qgd Gate-Drain “Miller”Charge3.4 --- 6.8 12 nC 7.5 SSPR60N03 All d ata sheet.com
www.doingter.cn — 3 — Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- V trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs,TJ=25℃ --- nS Qrr Reverse Recovery Charge --- nC Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width≦300us , duty cycle≦2%. 4. Essentially independent of operating temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform SSPR60N03 All d ata sheet.com
www.doingter.cn — 4 — Fig.5 Normalized Transient Response Fig.6 Maximum Safe Operation Area Fig.7 Switching Time Waveform Fig.8 EAS Waveform SSPR60N03 0086-0755-8278-9056 All d ata sheet.com