SSG6612N DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID= A,RDS(ON)<2 mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) A IDM Drain Current – Pulsed 30 PD Power Dissipation 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient** 62.5 G D D D DS S S SSG6612N All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 2.4 V RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=7A --- 20 mΩ VGS=4.5V,ID=5A 30 42 GFS Forward Transconductance VDS=5V, ID=7A 3 10 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 540 --- pF Coss Output Capacitance --- 83 --- Crss Reverse Transfer Capacitance --- 63 --- Switching Characteristics4 td(on) Turn-On Delay Time --- 10 --- ns tr Rise Time --- 4 --- ns td(off) Turn-Off Delay Time --- 27 --- ns tf Fall Time --- 5 --- ns Qg Total Gate Charge VGS=5V, VDS=10V, ID=7A --- 13 --- nC Qgs Gate-Source Charge --- 1.3 --- nC Qgd Gate-Drain “Miller” Charge --- 4.6 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage1 VGS=0V,IS=30A,TJ=25℃ --- 1.2 V ISD Continuous Source Current --- --- --- 2 A VDD=15V,ID=7A,RL=15Ω VGS=10V,RG=2.5Ω SSG6612N All d ata sheet.com
www.doingter.cn — 3 — Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Switch Time Test Circuit and Switching Waveforms： TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Power Dissipation Figure2. Drain Current TJ-Junction Temperature (℃) TJ-Junction Temperature (℃) Power Dissipation(W) Drain Current (A) SSG6612N All d ata sheet.com
www.doingter.cn — 4 — Figure3. Output Characteristics Figure4. Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure5. Capacitance Figure6. RDS(ON) vs Junction Temperature Figure7. Max BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature C Capacitance(pF) SSG6612N All d ata sheet.com
www.doingter.cn — — Figure9. Gate Charge Waveforms Figure10. Vgs(V) Qg(nC) Maximum Safe Operating Area Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) R(t), Normalized Effective T Transient Thermal Impedance T SSG6612N All d ata sheet.com
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