SSG4841P DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-40V,ID=-10A,RDS(ON)<15mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -10 A Continuous Drain Current-TC=100℃ -6.3 Pulsed Drain Current1 -40 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation 4.2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 30 ℃/W RƟJA Thermal Resistance,Junction to Ambient 60 G D D D DS1 S S SSG4841P All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-40V, TJ=25℃ --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.0 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-10A --- 11.5 15 mΩ VGS=-4.5V,ID=-8A --- 16 22 GFS Forward Transconductance VDS=-10V, ID=-10A --- 13 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-25V, VGS=0V, f=1MHz --- 2757 4000 pF Coss Output Capacitance --- 240 360 Crss Reverse Transfer Capacitance --- 137 200 Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=-20V, VGS=-10V ID=-1A,RGEN=6Ω --- 23 40 ns tr Rise Time2,3 --- 10 20 ns td(off) Turn-Off Delay Time2,3 --- 135 250 ns tf Fall Time2,3 --- 46 90 ns Qg Total Gate Charge2,3 VDS=-32V , VGS=-4.5V , ID=-10A --- 22.2 40 nC Qgs Gate-Source Charge 2,3 --- 8.2 16 nC Qgd Gate-Drain “Miller” Charge2,3 --- 8.8 16 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V SSG4841P All d ata sheet.com
www.doingter.cn — 3 — LS --- -10 A LSM --- -20 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) Continuous Source Current 3XOVHG6RXUFH&XUUHQW VG=VD=0V , Force Current 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2 % . 3. Essentially independent of operating temperature. Normalized Gate Threshold V oltage (V) Fig.3 Normalized V th vs. TJ -VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. T C Normalized On Resistance (m) Fig.2 Normalized RDSON vs. T J TJ , Junction Temperature (℃) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) SSG4841P All d ata sheet.com
www.doingter.cn — 4 — Normalized Thermal Response (RθJA) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area -VDS , Drain to Source V oltage (V)Square Wave Pulse Duration (s) Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform SSG4841P 0086-0755-8278-9056 All d ata sheet.com