SSG4825P DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-15A,RDS(ON)<11mΩ@VGS=-20V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃A -15 A Continuous Drain Current-TC=70℃A -12 IDM -80 PD Power Dissipation A =(Ta=25℃) 3 Power Dissipation A =(Ta=100℃) 2.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units Thermal Resistance,Junction to AmbientA ℃/ W RƟJA 75 G D D D D S S S W SSG4825P All d ata sheet.com
www.doingter.cn — 2 — 30 ℃/ W Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -30 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-24V --- --- -1 μA VGS=0V, VDS=-24V, TJ=55℃ -5 IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1 -1.3 -3 V ID 80 A RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-15A --- 8.5 12 mΩ 11 16 8 11 --- 13 GFS Forward Transconductance VDS=-5V, ID=-10A 30 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 2476 2900 pF Coss Output Capacitance --- 523 --- Crss Reverse Transfer Capacitance --- 325 --- Switching Characteristics,4 td(on) Turn-On Delay Time VDS=-15V, VGS=-10V RL=1.25Ω,RGEN=3Ω --- 14.4 --- ns tr Rise Time --- 11 --- ns td(off) Turn-Off Delay Time --- 23.6 --- ns μA SSG4825P All d ata sheet.com
www.doingter.cn — 3 — tf Fall Time --- 14 --- ns Qg Total Gate Charge VDS=-15V , VGS=-10V , ID=-10A --- 47.2 55 nC Qgs Gate-Source Charge --- 12 --- nC Qgd Gate-Drain “Miller” Charge --- 14 --- nC Rg 2 3 Ω Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=-1A, --- -0.72 -1 V IS Diode Forward Current --- --- -5.2 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) SSG4825P All d ata sheet.com
www.doingter.cn — 4 — SSG4825P All d ata sheet.com
www.doingter.cn — 5 — SSG4825P All d ata sheet.com
www.doingter.cn — — SSG4825P All d ata sheet.com
www.doingter.cn — — SSG4825P 0086-0755-8278-9056 All d ata sheet.com