SSG4543C

SSG4543C DOINGTER | Alldatasheet

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— 1 — Description： This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application. Features： N-Channel: VDS=40V,ID=6.7A,RDS(ON)<32mΩ@VGS=10V P-Channel: V DS=-40V,ID=-7.2A,RDS(ON)<40mΩ@VGS=-10V 1) High Power and current handing capability. 2) Lead free product is acquired. 3) Surface Mount Package. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±20 ±20 V ID Drain Current-Continuous 6.7 -7.2 A IDM (pluse) Drain Current-Continuous@ Current-Pulsed1 26.8 -28.8 PD Power Dissipation 2.5 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 -55 to +150 ℃ Thermal Characteristics： Channel Symbol Parameter Max Units N RƟJA Thermal Resistance,Junction to Ambient 62 ℃/W P RƟJA Thermal Resistance,Junction to Ambient 62 D2 S1 www.doingter.cn SSG4543C All d ata sheet.com

— 2 — N-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ON/Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.8 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5A --- mΩ VGS=4.5V,ID=3A --- GFS Forward Transconductance VDS=10V, ID=3A --- 3.6 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 420 800 pF Coss Output Capacitance --- 120 Crss Reverse Transfer Capacitance --- Switching Characteristics td(on) Turn-On Delay Time2.3 VDS=20V, ID=1A, VGS=4.5V,RGEN=25Ω --- 3.2 ns tr Rise Time2.3 --- 8.6 ns td(off) Turn-Off Delay Time2.3 --- ns tf Fall Time2.3 --- ns Qg Total Gate Charge2.3 VGS=4.5V, VDS=20V, ID=3A --- 2.8 5.6 nC Qgs Gate-Source Charge 2.3 --- 0.5 nC Qgd Gate-Drain “Miller” Charge2.3 --- 1.5 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage1 VGS=0V,IS=1A --- --- V LS --- 6.7 A LSM --- 13.4 A Continuous Source Current Pulsed Source Current VG=VD=0V , Force Current Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.doingter.cn SSG4543C All d ata sheet.com

— 3 — Typical Characteristics： (TC=25℃ unless otherwise noted) Figure5. Capacitance Figure6. RDS(ON) vs Junction Temperature ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage(V) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform TC , Case Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC)TJ , Junction Temperature (℃) Fig.6 Maximum Safe Operation Area Normalized Thermal Response (RθJA) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Square W ave Pulse Duration (s) VDS , Drain to Source V oltage (V) www.doingter.cn SSG4543C All d ata sheet.com

— 4 — P-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ON/Off States BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-40V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-4A --- 32 40 mΩ GFS Forward Transconductance VDS=-10V, ID=-3A --- 5 -- S Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 1050 1600 pFCoss Output Capacitance --- 110 160 Crss Reverse Transfer Capacitance --- 80 120 Switching Characteristics td(on) Turn-On Delay Time2.3 VDS=-20V,V GS=-4.5V, RGEN=25Ω. ID=-1A --- 20 40 ns tr Rise Time2.3 --- 12 24 ns td(off) Turn-Off Delay Time2.3 --- 46 80 ns tf Fall Time2.3 --- 6 12 ns Qg Total Gate Charge2.3 VGS=-4.5V, VDS=-20V, ID=-2A --- 8 16 nC Qgs Gate-Source Charge 2.3 --- 2.1 4.2 nC Qgd Gate-Drain “Miller”Charge2.3 --- 3.6 7.2 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-1A --- -- -1 V LS --- -7.2 A LSM --- -14.4 A Continuous Source Current Pulsed Source Current VG=VD=0V , Force Current Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.doingter.cn SSG4543C All d ata sheet.com

Typical Characteristics： (TC=25℃ unless otherwise noted) SSG4543C -ID , Continuous Drain Current (A) Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.8 Normalized RDSON vs. TJ TC , Case Temperature (℃) Fig.7 Continuous Drain Current vs. TC Qg , Gate Charge (nC) Fig.10 Gate Charge Waveform TJ , Junction Temperature (℃) Fig.9 Normalized Vth vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Square Wave Pulse Duration (s) Fig.11 Normalized Transient Impedance -VDS , Drain to Source Voltage (V) Fig.12 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) — 5 — www.doingter.cn 0086-0755-8278-9056 All d ata sheet.com