SSG4530C

SSG4530C DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel and P-Channel MOSFET use advanced trench Tech nol ogy To provide excellent RDS(ON)，low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application. Features： 1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ@VGS=10V P-Channel: V DS=-30V,ID=-6A,RDS(ON)<65mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±12 ±12 V ID Continuous Drain Current- Tj=150℃ A Continuous Drain Current-TC=70℃ 5.8 ±30 A PD Power Dissipation Ta=25℃ W Pulsed Drain Current Ta=25℃ 1.44 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 Thermal Characteristics： Symbol Parameter N-Channel P-Channel Units ℃/WRƟJA Thermal Resistance,Junction to Ambient 110 IDM Pulsed Drain Current A B A A SSG4530C All d ata sheet.com

www.doingter.cn — 2 — N-Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=-0V,ID=250μA --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V --- --- μA --- --- IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.7 --- 1.3 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=6A --- mΩ --- 32.3 VGS=4.5V,ID=5A GFS Forward Transconductance VDS=5V, ID=5A --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 680 --- pF Coss Output Capacitance --- 102 --- Crss Reverse Transfer Capacitance --- --- Rg Ω Switching Characteristics td(on) Turn-On Delay Time VDs=-15V, RGEN=2.1 Ω,VGS=10V --- 4.6 --- ns tr Rise Time --- 4.1 --- ns td(off) Turn-Off Delay Time --- 20.6 --- ns tf Fall Time --- 5.2 --- ns --- mΩ μA --- --- VGS=10V I D=6A TJ=125℃ Gate resistance VDS=0V V GS=0V f=1.0MHz SSG4530C All d ata sheet.com

www.doingter.cn — 3 — Qg Total Gate Charge VGS=10V, VDS=15V, ID=6A 13.84 nC --- 6.74 --- nC Qgs Gate-Source Charge --- 1.82 --- nC Qgd Gate-Drain “Miller” Charge --- 3.2 --- nC Drain-Source Diode Characteristics Qrr Reverse Recovery Charge 7.8 NC P-Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=-0V,ID=250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-24V --- --- -1 VGS=0V, VDS=-24V --- --- -5 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA - -0.7 -1.3 V ID VGS=-5V, VDS=-4.5V 6 --- --- RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-6A --- 52 65 mΩ VGS=-4.5V,ID=-5A --- 59 75 GFS Forward Transconductance -5V, ID=-5A --- 12 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 920 --- pF Coss Output Capacitance --- 190 --- Crss Reverse Transfer Capacitance --- 122 --- Switching Characteristics td(on) Turn-On Delay Time VDD=-15V, ID=-6A, RGEN=3Ω,VGS=-10V --- 7.7 --- ns tr Rise Time --- 5.7 --- ns td(off) Turn-Off Delay Time --- 20.2 --- ns --- dI/dt=100A/μs 0.5 VDS= A SSG4530C All d ata sheet.com

www.doingter.cn — 4 — tf Fall Time --- 9.5 --- ns Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-6A --- 18.5 --- nC --- 9.6 --- Qgs Gate-Source Charge --- 2.7 --- nC Qgd Gate-Drain “Miller” Charge --- 4.5 --- nC Drain-Source Diode Characteristics Qrr Reverse Recovery Charge --- 8.8 --- NC Trr 20 N-Typical Characteristics： (TC=25℃ unless otherwise noted) nC --- --- IF=-6A dI/dt=100A/μs IF=-6A dI/dt=100A/μs Body Diode Reverse Recovery Time Notes: A:The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C.The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient. D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max. E.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. SSG4530C All d ata sheet.com

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P www.doingter.cn — 7 — -Typical Characteristics： (TC=25℃ unless otherwise noted) SSG4530C All d ata sheet.com

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