SSG4520H DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel and P-Channel MOSFET useadvanced trench Tech nol ogy To provide excellent RDS(ON)，low gate charge. This device may be usedto form a level shifted high side switch, and for a host ofotherapplication. Features： N-Channel:V DS=20V,ID=6.8A,RDS(ON)<17mΩ@VGS=4.5V P-Channel: V DS=-30V,ID=-5.1A,RDS(ON)<55@VGS=-10 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON). 4) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 20 -30 V VGS Gate-Source Voltage ±10 ±20 V ID Continuous Drain Current 6.8 -5.1 A Continuous Drain Current1 26 -20 PD Power Dissipation 2 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter N-CH P-CH Units RƟJA Thermal Resistance,Junction to Ambient2 62.5 62.5 ℃/W D2S1 SSG4520H All d ata sheet.com
www.doingter.cn — 2 — N-Channel Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 19.5 21.5 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=20V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.7 1.1 V RDS(ON) Drain-Source On Resistance VGS=4.5V,ID=8A --- 12 17 mΩ VGS=2.5V,ID=4A --- 17 24 GFS Forward Transconductance VDS=10V, ID=4A --- 10 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=8V, VGS=0V, f=1MHz --- 500 --- pF Coss Output Capacitance --- 295 --- Crss Reverse Transfer Capacitance --- 96 --- Qg Gate Charge VGS=4.5V, VDS=10V, ID=3A --- 10 15 nc Qgs Gate-Source Charge --- 2.3 --- Qgd Gate-Drain Charge --- 2.9 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=10V, ID=3A , VGS=4.5V,RG=6Ω --- 11 --- ns tr Rise Time --- 30 --- ns td(off) Turn-Off Delay Time --- 35 --- ns tf Fall Time --- 10 --- ns Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A --- --- 1.2 V IS Continuous Source Current2 --- --- 4.5 A --- Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. Surface mounted on FR4 Board, t ≤ 10 sec. 3. Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%. 4. Guaranteed by design, not subject to production SSG4520H All d ata sheet.com
www.doingter.cn — 3 — P-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-24 --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20 VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -0.6 0.9 -1.3 V RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-6A --- 45 55 mΩ VGS=-4.5V,ID=-3A --- 53 68 GFS Forward Transconductance VDS=-5V, ID=-2.5A --- 13 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=-15, VGS=0V, f=1MHz --- 520 --- pF Coss Output Capacitance --- 130 --- Crss Reverse Transfer Capacitance --- 70 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=-15V, ID=-1A, VGS=-10 V,RG=6Ω --- 7 --- ns tr Rise Time --- 13 --- ns td(off) Turn-Off Delay Time --- 14 --- ns tf Fall Time --- 9 --- ns Qg Total Gate Charge VGS=-15 V,VDS=-10V ID=-5.1A --- 11 --- nC Qgs Gate-Source Charge --- 2.2 --- nC Qgd Gate-Drain “Miller” Charge --- 3 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-5.1A --- --- -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production SSG4520H All d ata sheet.com