SSG4510

SSG4510 DOINGTER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

www.doingter.cn — 1 — Description： This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON)，low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application. Features： N-Channel:VDS=100V,ID=2.2A,RDS(ON)<152mΩ@VGS=10V P-Channel: VDS=-100V,ID=-1.8A,RDS(ON)<200mΩ@VGS=-10V 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra Iow RDS(ON). 4) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage ±20 ±20 V ID Continuous Drain Current- TA=25℃ 2.2 -1.8 A Continuous Drain Current-TA=70℃ 1.7 -1.4 IDM Pulsed Drain Current1 13.2 -7.2 A PD Power Dissipation 1.5 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter N-CH P-CH Units RƟJA Thermal Resistance,Junction to Ambient 85 62.5 ℃/W RƟJC Thermal Resistance Junction-Case 25 --- ℃/W D2S1 SSG4510 All d ata sheet.com

www.doingter.cn — 2 — N-Channel Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V,TJ=25℃ --- --- 10 μA VGS=0V, VDS=80V,TJ=55℃ --- --- 100 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=2A --- --- 152 mΩ VGS=4.5V,ID=1A --- --- 158 GFS Forward Transconductance VDS=5V, ID=2A --- 10.2 --- S RG Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 --- Ω Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1050 --- pFCoss Output Capacitance --- 45 --- Crss Reverse Transfer Capacitance --- 30 --- Qg Gate Charge VGS=10V VDS=80V ID=2A 18.4 --- ncQgs Gate-Source Charge 3 --- Qgd Gate-Drain Charge 3.1 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3, ID=2A --- 5.6 --- ns tr Rise Time --- 20 --- ns td(off) Turn-Off Delay Time --- 28 --- ns tf Fall Time --- 24 --- ns --- --- --- SSG4510 All d ata sheet.com

www.doingter.cn — 3 — Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A,,TJ=25℃ --- --- 1.2 V IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 2.2 ns ISM Pulsed Source Current2,4 --- --- 13.2 nC 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Typical Characteristics： (TC=25℃ unless otherwise noted)N-Channel SSG4510 All d ata sheet.com

www.doingter.cn — 4 — diode Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance SSG4510

www.doingter.cn — 5 — P-Channel Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-100V,TJ=25℃ --- --- -1 μA VGS=0V, VDS=-80V,TJ=125℃ --- --- -10 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.2 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance mΩ GFS Forward Transconductance VDS=--10V, ID=-3A --- 6.5 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-50V, VGS=0V, f=1MHz --- 1455 2200 pFCoss Output Capacitance --- 880 1300 Crss Reverse Transfer Capacitance --- 58 85 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 16 --- Ω Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform SSG4510

www.doingter.cn — 6 — Switching Characteristics td(on) Turn-On Delay Time2,3 VGS=-10V,VDD=-50V RG=25Ω,ID=-1.8A --- 18 36 ns tr Rise Time2,3 --- 8 16 ns td(off) Turn-Off Delay Time2,3 --- 100 200 ns tf Fall Time2,3 --- 30 60 ns Qg Total Gate Charge2,3 VGS=-10V,VDS=-80V,ID=-1.8A --- 20 40 nC Qgs Gate-Source Charge2,3 --- 3.5 7 nC Qgd Gate-Drain Charge2,3 --- 4.6 9 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage VGS=0V,IS=-1A,TJ=25℃ --- --- -1 V IS Continuous Source Current VG=VD=0V , Force Current --- --- -1.8 V ISM Pulsed Source Current --- --- -3.6 V Trr Reverse Recovery Time VR=-100V, IS=-1A di/dt=100A/μs, TJ=25℃ --- 13 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Notes: 1. Repetitive Rating : Pulsed width limited by maxi mum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature . Typical Characteristics： (TC=25℃ unless otherwise noted)P -Channel -ID , Continuous Drain Current (A) TJ , Junction Temperature (℃ ) Fig.1 Continuous Drain Current vs. TJ Normalized On Resistance (mΩ ) TJ , Junction Temperature (℃ ) Fig.2 Normalized RDSON vs. T J SSG4510

Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃ ) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform SSG4510 — 7 — www.doingter.cn 0086-0755-8278-9056