SSG4462N DOINGTER | Alldatasheet
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www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=8A,RDS(ON) <20mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (T C=25℃ ) 8 A Drain Current – Continuous (T C=100℃ ) 5.6 IDM Drain Current – Pulsed 1 32 PD Power Dissipation (T C=25℃ ) 2.1 W Power Dissipation – Derate above 25 ℃ --- W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 60 G D D D DS1 S S SSG4462N All d ata sheet.com
www.doingter .cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , IDSS Drain -Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=0V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.6 2.2 V △VGS(th) VGS(th) Temperature Coefficient --- --- --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=8A --- 15.6 20 mΩ VGS=4.5V,ID=8A --- 20 28 GFS Forward Transconductance VDS=5V, ID=8A 18 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=30V, VGS=0V, f=1MHz --- 1600 --- pF Coss Output Capacitance --- 112 --- Crss Reverse Transfer Capacitance --- 98 --- Switching Characteristics td(on) Turn-On Delay Time 2,3 VDS=30V, , RL=1Ω RGEN=3Ω, VGS=10V --- --- --- ns tr Ris e Time2,3 --- 5.5 --- ns td(off) Turn-Off Delay Time2,3 --- 29 --- ns tf Fall Time 2,3 --- 4.5 --- ns SSG4462N All d ata sheet.com