SSG4410N DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=10A,RDS(ON)<13mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 10 A Drain Current – Continuous (TC=100℃ ) 6 IDM Drain Current – Pulsed 50 PD Power Dissipation (TC=25℃ ) 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient2 50 G D D D DS1 S S SSG4410N All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- V IDSS Drain-Source Leakage Current VDS=30V , VGS=0V ,TJ=25℃ --- --- uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.6 V RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=10A --- mΩ VGS=4.5V,ID=5A --- GFS Forward Transconductance VDS=5V, ID=10A --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1550 --- pF Coss Output Capacitance --- 300 --- Crss Reverse Transfer Capacitance --- 180 --- Switching Characteristics4 td(on) Turn-On Delay Time2,3 VDS=25V, ID=1A, RGEN=6Ω, VGS=10V --- --- ns tr Rise Time2,3 --- 200 --- ns td(off) Turn-Off Delay Time2,3 --- 100 --- ns tf Fall Time2,3 --- --- ns Qg Total Gate Charge2,3 VGS=5V, VDS=15V, ID=10A --- --- nC Qgs Gate-Source Charge 2,3 --- 5.5 --- nC Qgd Gate-Drain “Miller” Charge2,3 --- 3.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=10A,TJ=25℃ --- --- 1.2 V IS Continuous Source Current2 --- --- A Notes: SSG4410N All d ata sheet.com
www.doingter.cn — 3 — Typical Characteristics： (TC=25℃ unless otherwise noted) SSG4410N All d ata sheet.com
www.doingter.cn — 4 — 0086-0755-8278-9056 All d ata sheet.com