SSD3055

SSD3055 DOINGTER | Alldatasheet

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www.doingter.cn — — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=25A,RDS(ON)<25mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 25 A Continuous Drain Current-TC=100℃ 15 Continuous Drain Current-TA=25℃ 7.3 Continuous Drain Current-TA=70℃ 5.8 IDM Pulsed Drain Current2 50 A EAS Single Pulse Avalanche Energy3 8.1 mJ IAS Avalanche Current 12.7 A PD Power Dissipation4, TC=25℃ 20.8 W Power Dissipation4, TA=25℃ 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ D S G SSD3055 All d ata sheet.com

www.doingter.cn — — Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 6 ℃/W RƟJA Thermal Resistance Junction to mbient1 62 Electrical Characteristics：(TJ=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V,TA=25℃ --- --- 1 μA VGS=0V, VDS=24V,TA=55℃ --- --- 5 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.9 1.3 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=10A --- --- 25 mΩ VGS=4.5V,ID=8A --- --- 28 mΩ GFS Forward Transconductance VDS=5V , ID=10A --- 5.5 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 410 --- pFCoss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 50 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V,ID=10A, RG=3.3Ω,VGS=10V --- 1.6 --- ns tr Rise Time --- 15.8 --- ns td(off) Turn-Off Delay Time --- 13 --- ns SSD3055 All d ata sheet.com

www.doingter.cn — — tf Fall Time --- 4.8 --- ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=10A --- 4.9 --- nC Qgs Gate-Source Charge --- 1.66 --- nC Qgd Gate-Drain “Miller” Charge --- 1.85 --- nC RG Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω Drain-Source Diode Characteristics IS Max. Diode Forward Current1,5 VG=VD=0V , Force Current --- --- 24 A ISM Max. Pulsed Forward Current2,5 --- --- 50 A VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A,TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A,TJ=25℃ diF/dt=100A/μs --- 8.7 --- ns Qrr Reverse Recovery Charge --- 1.95 --- nC Notes: Typical Characteristics： (TA=25℃ unless otherwise noted) 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=10A Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source SSD3055 All d ata sheet.com

www.doingter.cn — — VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 VDS (V) ID (A) Tc=25oC Single Pulse 100ms 100us 1ms 10ms DC Fig.8 Safe Operating AreaFig.7 Capacitance SSD3055

www.doingter.cn — — 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform SSD3055 0086-0755-8278-9056