SSD20N20-125D DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=18A,RDS(ON)<165mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃G A Continuous Drain Current-TC=100℃ EAS Single Pulse Avalanche Energy 125 mJ IDM C A IAS 9.5 A PD Power Dissipation,TC=25℃ 102 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.82 ℃/W D S G Drain Current - Pulsed Avalanche Current (L=10mH) C B (Steady-State) RƟJA Thermal Resistance Junction to mbient 23A /W℃(t<10S) SSD20N20-125D All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA --- V R Drain-Source On Resistance VGS=10V,ID=1A --- 120 165 Dynamic Characteristics Rg VDS=0V, VGS=0V, f=1MHz --- 6.5 ---- Ω Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 800 --- pF Coss Output Capacitance --- 100 --- Crss Reverse Transfer Capacitance --- --- Switching Characteristics td(on) Turn-On Delay Time VGS=10V ,VDS=100V, RL=5.5Ω,RGEN=3Ω --- --- ns tr Rise Time --- --- ns td(off) Turn-Off Delay Time --- --- ns tf Fall Time --- --- ns Qg Total Gate Charge VGS=10V, VDS=100V, ID=18A --- nC Qgs Gate-Source Charge --- --- nC Qgd Gate-Drain “Miller” Charge --- --- nC Drain-Source Diode Characteristics Gate resistance VGS=4.5V,ID=1A --- 150 180 RDS(ON) mΩ mΩ SSD20N20-125D All d ata sheet.com
www.doingter.cn — 3 — VSD Source-Drain Diode Forward Voltage ID=9A --- --- 1.45 V trr --- 60 80 ns Qrr --- 800 --- nC Notes: Typical Characteristics： (TA=25℃ unless otherwise noted) A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5%max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge F=18A dI/dt=500A/ μsI SSD20N20-125D All d ata sheet.com
www.doingter.cn — 4 — SSD20N20-125D All d ata sheet.com
www.doingter.cn — —5 SSD20N20-125D 0086-0755-8278-9056 All d ata sheet.com