SS8550LT1 JIANGSU | Alldatasheet

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Technical content

  1. 9 0. 95 0. 95 2. 9 0. 4 1. 3 2. 4 1. 0 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR（ PNP ）

FEATURES

PCM : 0.3 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 μ A， IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA， IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μ A， IC=0 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μ A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 μ A Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μ A hFE（1） VCE= -1V, IC= -100mA 120 350 DC current gain hFE（2） VCE= -1V, IC= -800mA Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800 mA, IB= -80mA -1.2 V Transition frequency fT VCE= -10V, IC= -50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank L H Range 120- 200 200- 350 DEVICE MARKING SS8550LT1=Y2 Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR

SOT-23 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 Dimensions In Millimeters Dimensions In Inches 0.037TPY 0.022REF 0.950TPY 0.550REF D A E L b C 0.2 e θ