SS8550 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimentary to SS8050 Marking : Y 2 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO -40 V Collector-EmitterV oltage V CEO -25 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC -1500 m A Collector Pow er Dissipation PC 300 m W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Sym bol Test conditions M in M ax U miot Collector-base breakdow n voltage V CBO IC =-100μA, IE=0 -40 V Collector-emitter breakdow n voltage V CEO IC =-0.1mA, IB =0 -25 V Emitter-base breakdow n voltage V EBO IE=-100μA, IC =0 -5 V Collector cut-off current ICBO V CB =-40V , IE=0 -0.1 μA Collector cut-off current ICEO V CE =-20V , IB =0 -0.1 μA Emittercut-offcurrent IEBO V EB =-5V ,IC =0 -0.1 μA DC current gain hFE(1) V CE =-1V ,IC =-100mA 120 400 hFE(2) V CE =-1V ,IC =-800mA 40 Collector-emitter saturationvoltage V CE(sat) IC =-800mA, IB =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) IC =-800mA, IB =-80mA -1.2 V Base-emitteron voltage V BE(on) IC =-1V ,VCE =-10mA -1 V Base-emitter positive favorvoltage V BEF IB =-1A -1.55 V Transition frequency fT V CE = -10V , IC = -50mA f=30MHz
100 MHz
output capacitance C ob (VCB =-10V ,IE=0,f=1MHz) 20 pF CLASSIFICATION OF hFE Rank L H J Range 120-200 200-350 300-400 (PN P) 1. BASE 2. EMITTER SOT -23 3. COLLECTO SS8550
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics -0.1 -0.2 -0.3 -0.4 -0.5 I B =-4.0mA I B =-3.5mA I B =-3.0mA I B =-2.5mA I B =-2.0mA I B =-1.5mA I B =-1.0mA I B =-0.5mA I C [A], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE 100 1000 V CE = -1V h FE , DC CURRENT GAIN I C [mA], COLLECTOR CURRENT -10 -100 -1000 -10000 V CE(sat) V BE(sat) I C =10I B V BE (sat), V CE (sat)[mV], SATURATION VOLTAGE I C [mA], COLLECTOR CURRENT -0.1 -10 -100 V CE = -1V I C [mA], COLLECTOR CURRENT V BE [V], BASE-EMITTER VOLTAGE -1 -10 -100 -1000 100 f=1MHz I E C ob [pF], CAPACITANCE V CB [V], COLLECTOR-BASE VOLTAGE -1 -10 -100 -1000 100 1000 V CE =-10V f T [MHz], CURRENT GAIN-BANDWIDTH PRODUCT I C [mA], COLLECTOR CURRENT SS8550