SS52_V01 UMW | Alldatasheet
Document overview
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Technical content
Features
- Metal to silicon rectifier, majority carrier conduction.
- For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
- Low power loss, high efficiency.
- High current capability, low V F.
- High surge capacity. Schottky Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 6.0 W RθJA Thermal Resistance, Junction to Ambient 25 °C/W Symbol Parameter Device Units 52 53 54 55 56 58 510 VF Forward Voltage @ 5.0 A 0.55 0.67 0.85 V IR Reverse Current @ rated VR TA = 25°C 0.5 mA TA = 100°C 50 25 mA CT Total Capacitance V R = 4.0 V, f = 1.0 MHz 500 380 pF Thermal Characteristics Symbol Parameter Value Units 52 53 54 55 56 58 510 VRRM Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 100 V IF(AV) Average Rectified Forward Current .375 " lead length @ TA = 75°C 5.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 150 A Tstg Storage Temperature Range -50 to +175 °C TJ Operating Junction Temperature -50 to +175 °C
- Glass passivated E SMC/DO-214AB Dim Min Max A 5.59 6.22 B 6.60 7.11 C 2.75 3.25 D 0.152 0.305 E 7.75 8.13 F 2.00 2.62 G 0.051 0.203 H 0.76 1.27 All Dimensions in mm A B F D H G UMW SS52 THRU SS510 R R www.umw-ic.com 1 友台半导体有限公司友台半导体有限公司
ww.umw-ic.com 3 友台半导体有限公司 UMW SS52 THRU SS510 R R