CEM9926A UMW | Alldatasheet

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VDS (V) = 20V ID = 7A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.8V) Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 48 62.5 74 110 RθJL 35 40 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Maximum Units Drain-Source Voltage 20 V Gate-Source Voltage ±8 V ATA=70°C 6 Pulsed Drain Current B Continuous Drain Current A TA=25°C ID TA=70°C 1.44 W Power Dissipation TA=25°C PD Steady-State °C/W Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics Maximum Junction-to-Lead C Steady-State °C/W Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A UMW CEM9926A R w ww.umw-ic.com 1 友台半导体有限公司

TJ=55°C 5 IGSS 100 nA VGS(th) 0.3 0.5 0.8 V ID(ON) 30 A 21.6 26 TJ=125°C 29.2 36 VGS=2.5V, ID=5A 26.4 33 mΩ 33.3 42 mΩ gFS 22 S VSD 0.76 1 V IS 3A Ciss 1050 pF Coss 163 pF Crss 129 pF Rg 4 Ω Qg 15.2 nC Qgs 1n C Qgd 4n C tD(on) 6.5 ns tr 9n s tD(off) 56.5 ns tf 13.2 ns trr Body Diode Reverse Recovery time 21 ns Qrr Body Diode Reverse Recovery charge 7.1 nC IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V µA Gate-Body leakage current V DS=0V, VGS=±8V Gate Threshold Voltage V DS=VGS ID=250µA On state drain current V GS=4.5V, VDS=5V RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A mΩ VGS=1.8V, ID=4A VGS=0V, VDS=0V, f=1MHz Forward Transconductance V DS=5V, ID=5A Diode Forward Voltage I S=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=10V, f=1MHzOutput Capacitance Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistance Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=10V, ID=7AGate Source Charge Gate Drain Charge Turn-On DelayTime VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. w ww.umw-ic.com 2 友台半导体有限公司 Dual N-Channel Enhancement Mode Field Effect Transistor UMW CEM9926A R

w ww.umw-ic.com 5 友台半导体有限公司Pa ckage Mechanical Data-SOP-8 Marking Orderinginformation ("xxxx"代表年份周期 ) Dual N-Channel Enhancement Mode Field Effect Transistor UMW CEM9926A R