SS245F HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 45V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SS245F : SS245 SS245F Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Conditions SS245F V RRM V Average Forward Current I F(AV) A 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 V RMS V 31.5 Repetitive Peak Reverse Voltage Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =2.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =125℃ Thermal Resistance(Typical) R θJ-A W Between junction and ambient 55 R θJ-L Between junction and terminal 17 0.55 0.5 SS245F 60HZ Half-sine wave, Resistance load, TL(Fig.1) Maximum RMS Voltage
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5mm×5mm)Copper Pad Areas TL( 100 3.0 25 75 125 2.5 2.0 1.5 1.0 0.5 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) T A = 150 °C T A = 125 °C T A = 25 °C 100 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 VF(V) IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100
H igh Diode Semiconductor 4.65 1.9 0.55 SMAF SMAF Dimensions in inches and (millimeters) .146(3.70) .130(3.30) .106(2.70) .094(2.40) .063(1.60) .051(1.30) .193(4.90) .173(4.40) .009(0.23) .007(0.18) .051(1.30) .039(1.00) .047(1.20) .035(0.90)
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMAF