SPP9547

SPP9547 DOINGTER | Alldatasheet

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www.doingter .cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-40V,ID=-7.5A,RDS(ON) <40mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -TC=25℃ -7.5 A Continuous Drain Current -TC=100℃ -5.7 Pulsed Drain Current 1 -15 EAS Single Pulse Avalanche Energy 36 mJ PD Power Dissipation 3.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 40 ℃/W RƟJA Thermal Resistance,Junction to Ambient 85 G D D D DS1 S S SPP9547 All d ata sheet.com

www.doingter .cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA -40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-32V, TJ=25℃ --- --- -1 μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.0 --- -2.5 V RDS(ON) Drain -Source On Resistance2 VGS=-10V,ID=-6A --- --- 40 mΩ VGS=-4.5V,ID=-3A --- --- 70 GFS Forward Transconductance VDS=-5V, ID=-6A --- 12 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 1004 --- pF Coss Output Capacitance --- 108 --- Crss Reverse Transfer Capacitance --- 80 --- Switching Characteristics td(on) Turn-On Delay Time 2,3 VDS=-15V, VGS=-10V ID=-1A,RGEN=3.3Ω --- 19.2 --- ns tr Ris e Time2,3 --- 12.8 --- ns td(off) Turn-Off Delay Time2,3 --- 48.6 --- ns tf Fall Time 2,3 --- 4.6 --- ns Qg Total Gate Charge 2,3 VDS=-20V , VGS=-4.5V , ID=-6A --- 9 --- nC Qgs Gate -Source Charge 2,3 --- 2.54 --- nC Qgd Gate -Drain “Miller” Charge2,3 --- 3.1 --- nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage2 VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V SPP9547 All d ata sheet.com

www.doingter .cn — 3 — LS Continuous Source Current 1, 5 --- --- -7.5 LSM Puls ed Source Current2, 5 --- --- -15 Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) VG=VD=0V , Force Current 0 0.5 1 1.5 2 -VDS Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-6A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0 6 12 18 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) VDS=-20V ID=-6A Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics SPP9547 All d ata sheet.com

www.doingter .cn — 4 — 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized -VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 100 1000 10000 1 5 9 13 17 21 25 -VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -VDS (V) -ID (A) Tc=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance SPP9547

www.doingter .cn — 5 — Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform SPP9547 0086-0755-8278-9056