SPN9971 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=20A,RDS(ON)<36mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 20 A Continuous Drain Current-TC=100℃ 13 EAS Single Pulse Avalanche Energy 40 mJ PD Power Dissipation,TC=25℃ 31 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 4 ℃/W D S G IDM Pulsed Drain Current note1 note2 SPN9971 All d ata sheet.com
Maximum Pulsed Drain to Source Diode Forward Current Source Charge www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 3 V Drain-Source On Resistance VGS=10V,ID=10A --- 26 36 mΩ Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1150 --- pF Coss Output Capacitance --- 55 --- Crss Reverse Transfer Capacitance --- 45.3 --- Switching Characteristics td(on) Turn-On Delay Time VDS =30V, ID=15A, VGS=10V,RGEN=1.8Ω --- 7.6 --- ns tr Rise Time --- 20 --- ns td(off) Turn-Off Delay Time --- 15 --- ns tf Fall Time --- 24 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=10A --- 20.3 --- nC Qgs Gate- --- 3.7 --- nC Qgd Gate-Drain “Miller” Charge --- 5.3 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.2 V Is --- 20 A 1.6 RDS(on) VGS=4.5V,ID=5A --- 36 45 mΩ note3 Maximum Continuous Drain to Source Diode Forward Current --- ISM --- 80 A--- SPN9971 All d ata sheet.com
- Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature www.doingter.cn — 3 — trr Reverse Recovery Time 29 --- Ns qrr Reverse Recovery Charge 43 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 2. EAS condition : T J=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% --- --- SPN9971 All d ata sheet.com
www.doingter.cn — 4 — SPN9971 All d ata sheet.com
www.doingter.cn — 5 — SPN9971 0086-0755-8278-9056 All d ata sheet.com