SPN9928W DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： Features： 1) VDS=20V,ID=6.5A,RDS(ON)<24mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±10 V ID Drain Current – Continuous (TC=25℃ ) 1 6.5 A Drain Current – Continuous (TC=100℃ ) --- IDM Drain Current – Pulsed 20 PD Power Dissipation (TC=25℃ ) 1 1.6 W Power Dissipation – Derate above 25℃ --- TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 40 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 78 D1S2 This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. SPN9928W All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Drain-Source Leakage Current VDS=16V , VGS=0V ,TJ=25℃ --- --- uA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 1.5 V RDS(ON) Static Drain-Source On Resistance VGS=4.5V,ID=6.5A --- mΩ VGS=2.5V,ID=5.4A --- GFS Forward Transconductance VDS=5V, ID=3A --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=10V, VGS=0V, f=1MHz --- 700 --- pF Coss Output Capacitance --- 175 --- Crss Reverse Transfer Capacitance --- --- Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=10V, ID=1A, RGEN=6Ω, VGS=4.5V --- ns tr Rise Time2,3 --- ns td(off) Turn-Off Delay Time2,3 --- ns tf Fall Time2,3 --- ns Qg Total Gate Charge2,3 VGS=4.5V, VDS=10V, ID=3A --- nC Qgs Gate-Source Charge 2,3 --- 1.2 --- nC Qgd Gate-Drain “Miller” Charge2,3 --- --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1.3A,TJ=25℃ --- --- 1.2 V SPN9928W All d ata sheet.com
www.doingter.cn — 3 — Notes: IS Continuous Source Current --- --- 1.3 A Typical Characteristics： (TC=25℃ unless otherwise noted) SPN9928W All d ata sheet.com
www.doingter.cn — 4 — 0086-0755-8278-9056 SPN9928W All d ata sheet.com