SPN8882 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description: This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=30V,ID=55A,RDS(ON)<10mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 55 A Continuous Drain Current-TC=100℃ 30 Pulsed Drain Current2 112 EAS Single Pulse Avalanche Energy3 24.2 mJ IAS 22 A PD Power Dissipation,TC=25℃4 37.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics: Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 4 ℃/W D S G Avalanche Current SPN8882 All d ata sheet.com
www.doingter.cn — 2 — 62 ℃/W Electrical Characteristics:(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=30A --- 10 mΩ VGS=4.5V,ID=15A --- 18 Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 940 --- pF Coss Output Capacitance --- 131 --- Crss Reverse Transfer Capacitance --- 109 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, ID=15A, VGS=10V,RGEN=3.3Ω --- 4 --- ns tr Rise Time --- 8 --- ns td(off) Turn-Off Delay Time --- 31 --- ns tf Fall Time --- 4 --- ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=15A --- 9.8 --- nC Qgs Gate-Source Charge --- 4.2 --- nC Qgd Gate-Drain “Miller” Charge --- 3.6 --- nC Drain-Source Diode Characteristics RθJA Thermal Resistance Junction-Ambient 1 7.5 SPN8882 All d ata sheet.com
www.doingter.cn — 3 — VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- --- 1 V Is Continuous Source Current1.5 --- --- 43 A lSM Pulsed Source Current2.5 --- -- 112 Ns Trr --- 8.5 --- Qrr --- 2.2 --- Notes: Typical Characteristics: (TC=25℃ unless otherwise noted) VG=VD=0V , Force Current Reverse Recovery Time Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 100 120 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 4 6 8 10 VGS (V) RDSON (mΩ) ID=30A 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=175℃ TJ=25℃ Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics SPN8882 All d ata sheet.com
0.5 1.5 -50 25 100 175 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 TJ , Junction Temperature (℃) Normalized On Resistance diode Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 VDS (V) ID (A) 10us 1ms 10ms 100ms DC TC=25℃ Single Pulse 100us 0.01 0.1 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating AreaFig.7 Capacitance SPN8882 Fig.9 Normalized Maximum Transient Thermal Impedance 10.10.010.001 t , Pulse Width (s) 0.0001 0.001Normalized Thermal Response (RθJC) 0.00001 www.doingter.cn — 4 — 0086-0755-8278-9056