SPN80T10 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=140A,RDS(ON)<5.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 140 A Continuous Drain Current-TC=100℃ 97 Pulsed Drain Current 550 EAS Single Pulse Avalanche Energy5 1200 mJ PD Power Dissipation 330 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 0.45 ℃/W D S G SPN80T10 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 110 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 3.2 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=40A --- 4.6 5.5 mΩ GFS Forward Transconductance VDS=50V, ID=40A 170 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 10500 --- pF Coss Output Capacitance --- 914 --- Crss Reverse Transfer Capacitance --- 695 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=65V,ID=40A VGS=10V,RGEN=2.5Ω --- 25 --- ns tr Rise Time --- 100 --- ns td(off) Turn-Off Delay Time --- 65 --- ns tf Fall Time --- 77 --- ns Qg Total Gate Charge VGS=10V, VDS=44V, ID=40A --- 120 --- nC Qgs Gate-Source Charge --- 30 --- nC Qgd Gate-Drain “Miller” Charge --- 35 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=40A --- 0.85 1.2 V SPN80T10 All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃，VDD=50V,VG=10V,L=1mH,Rg=25Ω. Typical Characteristics： (TC=25℃ unless otherwise noted) SPN80T10 All d ata sheet.com
www.doingter.cn — 4 — SPN80T10 All d ata sheet.com
www.doingter.cn — 5 — SPN80T10 0086-0755-8278-9056 All d ata sheet.com