SPN65T10 DOINGTER | Alldatasheet
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Technical content
www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=100A,RDS(ON) <13mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -1 100 A Continuous Drain Current -TC=100℃ 80 Pulsed Drain Current 2 380 EAS Single Pulse Avalanche Energy 3 800 mJ PD Power Dissipation 4 200 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 0.75 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 --- D S G SPN65T10 All d ata sheet.com
www.doingter .cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 110 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 3 4 V RDS(ON) Drain -Source On Resistance2 VGS=10V,ID=40A --- 9.9 13 mΩ VGS=4.5V,ID=A --- --- --- GFS Forward Transconductance VDS=50V, ID=40A 100 --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 4800 --- pF Coss Output Capacitance --- 304 --- Crss Reverse Transfer Capacitance --- 150 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=40A, RGEN=2.5Ω.VGS=10V --- 15 --- ns tr Ris e Time --- 50 --- ns td(off) Turn-Off Delay Time --- 40 --- ns tf Fall Time --- 55 --- ns Qg Total Gate Charge VGS=10V, VDS=80V, ID=40A --- 85 --- nC Qgs Gate -Source Charge --- 18 --- nC Qgd Gate -Drain “Miller” Charge --- 28 --- nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage2 VGS=0V,IS=40A --- --- -1.2 V SPN65T10 All d ata sheet.com
Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance www.doingter .cn — —5 SPN65T10 0086-0755-8278-9056 All d ata sheet.com