SPN6098 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=68 A,RDS(ON)<10mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 68 A Continuous Drain Current-TC=100℃ --- Pulsed Drain Current2 204 EAS Single Pulse Avalanche Energy4 91 mJ PD Power Dissipation,TC=25℃ 81 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.54 ℃/W RƟJA Thermal Resistance,Junction to Ambient5 62 D SG SPN6098 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 7.5 10 mΩ VGS=4.5V,ID=10A --- 10 13 Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 1204 --- pF Coss Output Capacitance --- 194.1 --- Crss Reverse Transfer Capacitance --- 9.9 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=25A, VGS=10V,RGEN=3Ω --- 23.9 --- ns tr Rise Time --- 4.6 --- ns td(off) Turn-Off Delay Time --- 37.8 --- ns tf Fall Time --- 6.4 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=25A --- 17.9 --- nC Qgs Gate-Source Charge --- 3.8 --- nC Qgd Gate-Drain “Miller” Charge --- 4.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V Ls Continuous Source Current --- 68 A VGS<Vth SPN6098 All d ata sheet.com
www.doingter.cn — 3 — trr Reverse Recovery Time 36.3 --- Ns qrr Reverse Recovery Charge 1.4 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) IS=25 A, di/dt=100 A/μs 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) VDD=30 V, RG=50 Ω, L=0.3 mH, starting Tj=25 ℃. 5) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 0 2 4 6 8 10 100 150
200 Tj = 25 ℃ VGS= 10 V
VGS= 7.5 V VGS= 6.5 V VGS= 6 V VGS= 5.5 V VGS= 5 V VGS= 4.5 V VGS= 4 V VGS= 3.5 V ID, Drain current (A) VDS, Drain-source voltage (V) 3.5 4.5 5.5 6.5 7.5 2 4 6 8 10 0.1 100 1000ID, Drain current(A) VGS, Gate-source voltage(V) VDS= 10 V Tj = 25 ℃ 10 20 30 40 50 60 100 101 104 f = 100 kHz VGS = 0 V C, Capacitance (pF) VDS, Drain-source voltage (V) Ciss Coss Crss 0 5 10 15 20 ID = 25 A VDS = 50 V VGS, Gate-source voltage(V) Qg, Gate charge(nC) Figure 3, Typ. capacitances Figure 4, Typ. gate charge SPN6098 All d ata sheet.com
www.doingter.cn — —5 Figure 11, Safe operation area TC=25 ℃ Figure 12, Max. transient thermal impedance 0.1 1 10 100 0.01 0.1 100 1000 10 ms VDS, Drain-source voltage(V) ID, Drain current(A) 10 μs DC 1 ms 100 μsRDS(ON) Limited 10-6 10-5 10-4 10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101 zthjc Thermal Response(K/W) D= tp/T Single Pulse 0.01 0.02 0.05 0.1 0.2 0.5 D= 1 tp Pulse width(s) SPN6098 0086-0755-8278-9056 All d ata sheet.com