SPN5454 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=30A,RDS(ON)<16mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 30 A Continuous Drain Current-TC=100℃1 21.2 Pulsed Drain Current2 70 PD Power Dissipation,TC=25℃4 45 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ RƟJC Thermal Resistance,Junction to Case2 3.3 ℃/W D S G SPN5454 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 2 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 12.9 16 mΩ VGS=4.5V,ID=15A --- 18.9 24 GFS Forward Transconductance VDS=5V, ID=20A 33 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=20V, VGS=0V, f=1MHz --- 964 --- pF Coss Output Capacitance --- 109 --- Crss Reverse Transfer Capacitance --- 96 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=30V, ID=1A, VGS=10V,RGEN=3.3Ω --- 5.5 --- ns tr Rise Time --- 14 --- ns td(off) Turn-Off Delay Time --- 24 --- ns tf Fall Time --- 12 --- ns Qg Total Gate Charge VGS=10V, VDS=20V, ID=20A --- 22.9 --- nC Qgs Gate-Source Charge --- 3.5 --- nC Qgd Gate-Drain “Miller” Charge --- 5.3 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=30A --- --- 1.2 V SPN5454 All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance SPN5454 0086-0755-8278-9056 All d ata sheet.com