SPN4920W DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=6.9A,RDS(ON)<32mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(Ta=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± V ID Continuous Drain Current -TA=25℃A 6.9 A Continuous Drain Current- TA=70℃A 5.8 Pulsed Drain CurrentB 30 PD Power Dissipation 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJL Maximum Junction-to-Lead 60 ℃/W RƟJA Thermal Resistance,Junction to Ambient 110 D2S1 SPN4920W All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.65 --- 1.3 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=6.9A --- 24 32 mΩ VGS=4.5V,ID=5A --- 27 36 GFS Forward Transconductance VDS=5V, ID=5A --- 9 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 600 --- pF Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 68 --- Rg VDS=0V, VGS=0V, f=1MHz --- 3 --- Ω Switching Characteristics4 td(on) Turn-On Delay Time VDS=15V, RL =2.1Ω RGEN=3Ω. VGS=10V, --- 4.6 --- ns tr Rise Time --- 4.1 --- ns td(off) Turn-Off Delay Time --- 20.6 --- ns tf Fall Time --- 5.2 --- ns Qg Total Gate Charge VGS=10V, VDS=15V, ID=6.9A --- 13.84 --- nC Qgs Gate-Source Charge --- 1.82 --- nC Qgd Gate-Drain “Miller” Charge --- 3.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- 0.76 1 V Gate resistance SPN4920W All d ata sheet.com
Trr Body Diode Reverse Recovery Time I F =6.9A, dI/dt=100A/ --- 16.5 --- Ns Qrr Body Diode Reverse Recovery Charge I F =6.9A, dI/dt=100A/ --- 7.8 --- Nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) A:The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C.The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient. D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max. E.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. www.doingter.cn — —3 SPN4920W All d ata sheet.com
www.doingter.cn — 4 — SPN4920W 0086-0755-8278-9056 All d ata sheet.com