SPN4920 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=7A,RDS(ON)<25mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 7 A Continuous Drain Current-TC=100℃ 4.95 IDM Pulsed Drain Current 40 PD Power Dissipation4 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient2 85 ℃/W SPN4920 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.1 1.7 2.1 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=7A --- 17 25 mΩ VGS=4.5V,ID=6A --- 26 40 GFS Forward Transconductance VDS=5V, ID=7A --- 15 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 380 --- pF Coss Output Capacitance --- 67 --- Crss Reverse Transfer Capacitance --- 41 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=15V, RL =2Ω RGEN=3Ω. VGS=10V, --- 5 --- ns tr Rise Time --- 3 --- ns td(off) Turn-Off Delay Time --- 15 --- ns tf Fall Time --- 3 --- ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=7A --- 7.2 --- nC Qgs Gate-Source Charge --- 1.3 --- nC Qgd Gate-Drain “Miller” Charge --- 1.7 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=7A --- 1.2 V SPN4920 All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance SPN4920 0086-0755-8278-9056 All d ata sheet.com